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IPB80P04P4-07-VB Product details
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1. Product Introduction
**IPB80P04P4-07-VB** is a high-performance single P-channel MOSFET in a TO263 package. The MOSFET supports a drain-source voltage (VDS) of up to -40V, a gate-source voltage (VGS) range of ±20V, and a turn-on voltage (Vth) of -2.5V. It uses Trench technology to provide an on-resistance (RDS(ON)) as low as 4.1mΩ at VGS=10V, an on-resistance of 8.28mΩ at VGS=4.5V, and can handle a drain current (ID) of up to -110A. These features make the IPB80P04P4-07-VB ideal for high-current and high-efficiency load switching applications.
**IPB80P04P4-07-VB** is a high-performance single P-channel MOSFET in a TO263 package. The MOSFET supports a drain-source voltage (VDS) of up to -40V, a gate-source voltage (VGS) range of ±20V, and a turn-on voltage (Vth) of -2.5V. It uses Trench technology to provide an on-resistance (RDS(ON)) as low as 4.1mΩ at VGS=10V, an on-resistance of 8.28mΩ at VGS=4.5V, and can handle a drain current (ID) of up to -110A. These features make the IPB80P04P4-07-VB ideal for high-current and high-efficiency load switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | 4.1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
2. Detailed parameter description
- **Model**: IPB80P04P4-07-VB
- **Package**: TO263
- **Configuration**: Single P-channel MOSFET
- **Drain-source voltage (VDS)**: -40V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-through voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 4.1mΩ @ VGS=10V
- 8.28mΩ @ VGS=4.5V
- **Continuous drain current (ID)**: -110A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 175°C
- **Power handling capability**: Excellent low conduction loss, suitable for high current applications
- **Switching Speed**: Ideal for high-speed switching applications
- **Model**: IPB80P04P4-07-VB
- **Package**: TO263
- **Configuration**: Single P-channel MOSFET
- **Drain-source voltage (VDS)**: -40V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-through voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 4.1mΩ @ VGS=10V
- 8.28mΩ @ VGS=4.5V
- **Continuous drain current (ID)**: -110A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 175°C
- **Power handling capability**: Excellent low conduction loss, suitable for high current applications
- **Switching Speed**: Ideal for high-speed switching applications
Domain and module applications：
3. Applicable fields and modules
**IPB80P04P4-07-VB** The high current handling capability and low on-resistance of MOSFET make it very useful in multiple fields:
- **Power management**: Due to its low on-resistance, IPB80P04P4-07-VB is very suitable for efficient DC-DC converters and power switches. It can effectively reduce power loss and improve power conversion efficiency, so it is suitable for power supply systems and computer power supplies.
- **Automotive electronics**: In automotive electronic systems, especially in battery management systems and power control modules of electric vehicles (EV) and hybrid electric vehicles (HEV), IPB80P04P4-07-VB can provide stable performance and high current handling capability, improving system efficiency and reliability.
- **Industrial Applications**: In industrial automation and motor control systems, the high current handling capability and low power loss of the IPB80P04P4-07-VB make it an ideal choice for high-power switching and load regulation, improving the overall performance and durability of the equipment.
- **Consumer Electronics**: In consumer electronics products such as power adapters and home appliances, this MOSFET can be used for efficient power conversion and load control, reducing energy consumption and improving the operating efficiency of the equipment.
- **Solar Inverters**: The low on-resistance of this MOSFET makes it suitable for solar inverters, capable of handling high currents and improving the energy conversion efficiency of the system, supporting the optimization of renewable energy systems.
**IPB80P04P4-07-VB** is widely used in power management, automotive electronics, industrial automation, consumer electronics, and solar inverters due to its excellent electrical performance and high current handling capability.
**IPB80P04P4-07-VB** The high current handling capability and low on-resistance of MOSFET make it very useful in multiple fields:
- **Power management**: Due to its low on-resistance, IPB80P04P4-07-VB is very suitable for efficient DC-DC converters and power switches. It can effectively reduce power loss and improve power conversion efficiency, so it is suitable for power supply systems and computer power supplies.
- **Automotive electronics**: In automotive electronic systems, especially in battery management systems and power control modules of electric vehicles (EV) and hybrid electric vehicles (HEV), IPB80P04P4-07-VB can provide stable performance and high current handling capability, improving system efficiency and reliability.
- **Industrial Applications**: In industrial automation and motor control systems, the high current handling capability and low power loss of the IPB80P04P4-07-VB make it an ideal choice for high-power switching and load regulation, improving the overall performance and durability of the equipment.
- **Consumer Electronics**: In consumer electronics products such as power adapters and home appliances, this MOSFET can be used for efficient power conversion and load control, reducing energy consumption and improving the operating efficiency of the equipment.
- **Solar Inverters**: The low on-resistance of this MOSFET makes it suitable for solar inverters, capable of handling high currents and improving the energy conversion efficiency of the system, supporting the optimization of renewable energy systems.
**IPB80P04P4-07-VB** is widely used in power management, automotive electronics, industrial automation, consumer electronics, and solar inverters due to its excellent electrical performance and high current handling capability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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