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IPB80P04P4-05-VB Product details
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1. IPB80P04P4-05-VB MOSFET Product Introduction
IPB80P04P4-05-VB is a high-performance P-channel power MOSFET in TO-263 package. The MOSFET has a maximum drain-source voltage (VDS) of -40V and a maximum continuous drain current (ID) of -110A. Its gate threshold voltage (Vth) is -2.5V, allowing the device to operate stably at a lower gate voltage. The device has an on-resistance (RDS(ON)) of 8.28mΩ (@VGS=4.5V) and 4.1mΩ (@VGS=10V), with extremely low on-resistance and high current handling capability. Using Trench technology, IPB80P04P4-05-VB is suitable for high-efficiency, low-power switching applications.
IPB80P04P4-05-VB is a high-performance P-channel power MOSFET in TO-263 package. The MOSFET has a maximum drain-source voltage (VDS) of -40V and a maximum continuous drain current (ID) of -110A. Its gate threshold voltage (Vth) is -2.5V, allowing the device to operate stably at a lower gate voltage. The device has an on-resistance (RDS(ON)) of 8.28mΩ (@VGS=4.5V) and 4.1mΩ (@VGS=10V), with extremely low on-resistance and high current handling capability. Using Trench technology, IPB80P04P4-05-VB is suitable for high-efficiency, low-power switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | 4.1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
2. Detailed parameter description of IPB80P04P4-05-VB MOSFET
- **Package type**: TO-263
- **Channel configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -40V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON)）**:
- 8.28mΩ @ VGS = 4.5V
- 4.1mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: -110A
- **Technology type**: Trench technology
- **Package type**: TO-263
- **Channel configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -40V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON)）**:
- 8.28mΩ @ VGS = 4.5V
- 4.1mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: -110A
- **Technology type**: Trench technology
Domain and module applications：
III. Application fields and module examples of IPB80P04P4-05-VB
1. **DC-DC converter**: In DC-DC converters, IPB80P04P4-05-VB is suitable for high-efficiency power conversion due to its low on-resistance and high current handling capability. Its high current carrying capacity ensures low losses during the conversion process, improving the efficiency of the overall system.
2. **Electric vehicle power system**: In the power management system of electric vehicles, this MOSFET is able to handle load current and provide a low-power switching solution. Its high current capability and low on-resistance are suitable for use in battery management and motor drive circuits to optimize the energy efficiency and performance of the system.
3. **Power management and switching power supply**: In switching power supplies and power management systems, the low on-resistance and high current capability of IPB80P04P4-05-VB make it an ideal switching element. It can effectively control the current flow and reduce power consumption, and is suitable for various high-efficiency power modules.
4. **Power amplifier circuit**: In power amplifier circuits, IPB80P04P4-05-VB can be used as a switching element to handle high current loads. Its low RDS(ON) characteristics help reduce power losses and improve amplifier efficiency.
5. **High-efficiency switching applications**: Suitable for applications that require high switching frequency and low power consumption, such as LED driver circuits and other high-efficiency switching modules. The MOSFET is able to maintain stable switching performance under high current loads, ensuring system reliability and efficiency.
In summary, IPB80P04P4-05-VB MOSFET is widely used in power management, switching power supplies, electric vehicles, and power amplifiers due to its low on-resistance and high current handling capability. Its high efficiency and low power consumption make it an ideal choice for a variety of high-load applications.
1. **DC-DC converter**: In DC-DC converters, IPB80P04P4-05-VB is suitable for high-efficiency power conversion due to its low on-resistance and high current handling capability. Its high current carrying capacity ensures low losses during the conversion process, improving the efficiency of the overall system.
2. **Electric vehicle power system**: In the power management system of electric vehicles, this MOSFET is able to handle load current and provide a low-power switching solution. Its high current capability and low on-resistance are suitable for use in battery management and motor drive circuits to optimize the energy efficiency and performance of the system.
3. **Power management and switching power supply**: In switching power supplies and power management systems, the low on-resistance and high current capability of IPB80P04P4-05-VB make it an ideal switching element. It can effectively control the current flow and reduce power consumption, and is suitable for various high-efficiency power modules.
4. **Power amplifier circuit**: In power amplifier circuits, IPB80P04P4-05-VB can be used as a switching element to handle high current loads. Its low RDS(ON) characteristics help reduce power losses and improve amplifier efficiency.
5. **High-efficiency switching applications**: Suitable for applications that require high switching frequency and low power consumption, such as LED driver circuits and other high-efficiency switching modules. The MOSFET is able to maintain stable switching performance under high current loads, ensuring system reliability and efficiency.
In summary, IPB80P04P4-05-VB MOSFET is widely used in power management, switching power supplies, electric vehicles, and power amplifiers due to its low on-resistance and high current handling capability. Its high efficiency and low power consumption make it an ideal choice for a variety of high-load applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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