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IPB80P03P4L-07-VB Product details
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IPB80P03P4L-07-VB Product Introduction
IPB80P03P4L-07-VB is a high-performance P-type power MOSFET in TO263 package, designed for negative voltage applications and high current loads. This MOSFET has a maximum drain-source voltage (VDS) of -30V, a gate-source voltage (VGS) range of ±20V, and a threshold voltage (Vth) of -2.5V. Based on advanced Trench technology, it provides extremely low on-resistance, specifically 11mΩ at VGS=4.5V and 8mΩ at VGS=10V, while supporting a drain current of up to -75A. This makes IPB80P03P4L-07-VB an ideal choice for high-efficiency application scenarios that require high current and low power loss.
IPB80P03P4L-07-VB is a high-performance P-type power MOSFET in TO263 package, designed for negative voltage applications and high current loads. This MOSFET has a maximum drain-source voltage (VDS) of -30V, a gate-source voltage (VGS) range of ±20V, and a threshold voltage (Vth) of -2.5V. Based on advanced Trench technology, it provides extremely low on-resistance, specifically 11mΩ at VGS=4.5V and 8mΩ at VGS=10V, while supporting a drain current of up to -75A. This makes IPB80P03P4L-07-VB an ideal choice for high-efficiency application scenarios that require high current and low power loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | 8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
IPB80P03P4L-07-VB Parameter Description
- **Package**: TO263
- **Configuration**: Single P channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 11mΩ@VGS=4.5V
- 8mΩ@VGS=10V
- **Drain current (ID)**: -75A
- **Technology**: Trench technology
- **Package**: TO263
- **Configuration**: Single P channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 11mΩ@VGS=4.5V
- 8mΩ@VGS=10V
- **Drain current (ID)**: -75A
- **Technology**: Trench technology
Domain and module applications：
Applications and modules of IPB80P03P4L-07-VB
1. **Power management**: IPB80P03P4L-07-VB performs well in power management modules, especially for negative voltage power supply design and DC-DC converters. Its low on-resistance can reduce power loss and improve power conversion efficiency, suitable for applications that require efficient energy conversion.
2. **Electric vehicles**: In the field of electric vehicles, this P-type MOSFET is often used in battery management systems and electric drive systems. Its high current handling capability and low on-resistance can ensure the efficiency and reliability of the battery charging and discharging process, helping to improve the overall performance of electric vehicles.
3. **Motor control**: IPB80P03P4L-07-VB is suitable for motor drive control systems and can provide efficient current switching capabilities. Its low on-resistance characteristics can effectively reduce power consumption and heat generation under high current load conditions, thereby improving the stability and reliability of the motor control system.
4. **Industrial Applications**: In industrial control systems, IPB80P03P4L-07-VB can be used for high-power switching and negative voltage applications. Its excellent current carrying capacity and low on-resistance ensure efficient operation in various industrial environments, suitable for demanding industrial power supplies and control modules.
5. **Consumer Electronics**: In consumer electronics, such as high-efficiency power adapters and low-voltage load applications, IPB80P03P4L-07-VB can effectively reduce power consumption and improve energy efficiency. Its low on-resistance characteristics are very beneficial for power adapters and other consumer electronics that require efficient energy transfer.
1. **Power management**: IPB80P03P4L-07-VB performs well in power management modules, especially for negative voltage power supply design and DC-DC converters. Its low on-resistance can reduce power loss and improve power conversion efficiency, suitable for applications that require efficient energy conversion.
2. **Electric vehicles**: In the field of electric vehicles, this P-type MOSFET is often used in battery management systems and electric drive systems. Its high current handling capability and low on-resistance can ensure the efficiency and reliability of the battery charging and discharging process, helping to improve the overall performance of electric vehicles.
3. **Motor control**: IPB80P03P4L-07-VB is suitable for motor drive control systems and can provide efficient current switching capabilities. Its low on-resistance characteristics can effectively reduce power consumption and heat generation under high current load conditions, thereby improving the stability and reliability of the motor control system.
4. **Industrial Applications**: In industrial control systems, IPB80P03P4L-07-VB can be used for high-power switching and negative voltage applications. Its excellent current carrying capacity and low on-resistance ensure efficient operation in various industrial environments, suitable for demanding industrial power supplies and control modules.
5. **Consumer Electronics**: In consumer electronics, such as high-efficiency power adapters and low-voltage load applications, IPB80P03P4L-07-VB can effectively reduce power consumption and improve energy efficiency. Its low on-resistance characteristics are very beneficial for power adapters and other consumer electronics that require efficient energy transfer.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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