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IPB80P03P4L-04-VB Product details
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1. IPB80P03P4L-04-VB Product Introduction:
IPB80P03P4L-04-VB is a high-performance P-channel MOSFET in TO263 package. It has a maximum drain-source voltage (VDS) of -30V and a maximum gate-source voltage (VGS) of ±20V, which is suitable for negative voltage applications. The threshold voltage (Vth) of this MOSFET is -3V, ensuring reliable conduction under appropriate gate-source voltage. The use of Trench technology gives it a low on-resistance (RDS(ON)), which is 5mΩ at VGS=10V, and a maximum drain current (ID) of up to -100A. With its excellent electrical performance and reliability, IPB80P03P4L-04-VB performs well in a variety of high-efficiency switching applications.
IPB80P03P4L-04-VB is a high-performance P-channel MOSFET in TO263 package. It has a maximum drain-source voltage (VDS) of -30V and a maximum gate-source voltage (VGS) of ±20V, which is suitable for negative voltage applications. The threshold voltage (Vth) of this MOSFET is -3V, ensuring reliable conduction under appropriate gate-source voltage. The use of Trench technology gives it a low on-resistance (RDS(ON)), which is 5mΩ at VGS=10V, and a maximum drain current (ID) of up to -100A. With its excellent electrical performance and reliability, IPB80P03P4L-04-VB performs well in a variety of high-efficiency switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -3V | -100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -3V | -100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -3V | -100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
2. Detailed parameter description of IPB80P03P4L-04-VB:
- **Package type**: TO263
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3V
- **On-resistance (RDS(ON))**:
- 6.25mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: -100A
- **Technology type**: Trench
- **Package type**: TO263
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3V
- **On-resistance (RDS(ON))**:
- 6.25mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: -100A
- **Technology type**: Trench
Domain and module applications：
3. Application fields and modules:
1. **Power switch**:
In power switch applications, IPB80P03P4L-04-VB is suitable for negative voltage conversion and inverter circuits. Its low on-resistance and high current handling capability can significantly reduce switching losses and improve efficiency, and is widely used in DC-DC converters and high-efficiency power modules.
2. **Battery Management System (BMS)**:
This MOSFET is used for battery charge and discharge control in battery management systems, especially for systems that require negative voltage management. Its high current carrying capacity and low on-resistance help improve the reliability and efficiency of battery management, and is commonly used in electric vehicles and energy storage systems.
3. **Automotive electronics**:
IPB80P03P4L-04-VB can be used for power switching and load control in automotive electronic systems. In automotive electronic devices such as power seats, power windows and power doors, it provides efficient negative voltage control and improves system stability and reliability.
4. **Inverters and power regulators**:
In inverters and power regulators, this MOSFET can be used for high-efficiency negative voltage control. Its excellent electrical performance and low on-resistance help improve power conversion efficiency and reduce heat generation, making it suitable for solar inverters and power management modules.
5. **Communication equipment**:
In communication equipment, IPB80P03P4L-04-VB can be used for negative voltage power switching and load control. These devices have high requirements for power stability and efficiency. The low on-resistance and high current carrying capacity of MOSFET can meet these requirements and ensure reliable operation of the equipment.
The high performance and wide applicability of IPB80P03P4L-04-VB make it an ideal choice in many application scenarios that require high-efficiency negative voltage control.
1. **Power switch**:
In power switch applications, IPB80P03P4L-04-VB is suitable for negative voltage conversion and inverter circuits. Its low on-resistance and high current handling capability can significantly reduce switching losses and improve efficiency, and is widely used in DC-DC converters and high-efficiency power modules.
2. **Battery Management System (BMS)**:
This MOSFET is used for battery charge and discharge control in battery management systems, especially for systems that require negative voltage management. Its high current carrying capacity and low on-resistance help improve the reliability and efficiency of battery management, and is commonly used in electric vehicles and energy storage systems.
3. **Automotive electronics**:
IPB80P03P4L-04-VB can be used for power switching and load control in automotive electronic systems. In automotive electronic devices such as power seats, power windows and power doors, it provides efficient negative voltage control and improves system stability and reliability.
4. **Inverters and power regulators**:
In inverters and power regulators, this MOSFET can be used for high-efficiency negative voltage control. Its excellent electrical performance and low on-resistance help improve power conversion efficiency and reduce heat generation, making it suitable for solar inverters and power management modules.
5. **Communication equipment**:
In communication equipment, IPB80P03P4L-04-VB can be used for negative voltage power switching and load control. These devices have high requirements for power stability and efficiency. The low on-resistance and high current carrying capacity of MOSFET can meet these requirements and ensure reliable operation of the equipment.
The high performance and wide applicability of IPB80P03P4L-04-VB make it an ideal choice in many application scenarios that require high-efficiency negative voltage control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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