中文
English
IPB80P03P4-05-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**IPB80P03P4-05-VB** is a high-performance P-Channel MOSFET in TO263 package based on Trench technology. The MOSFET can withstand a drain-source voltage (VDS) of up to -30V and a continuous drain current (ID) of up to -100A. At VGS=10V, the on-resistance (RDS(ON)) is as low as 5mΩ, which can effectively reduce conduction losses and improve system efficiency. This makes **IPB80P03P4-05-VB** very suitable for high-efficiency power switching and load management applications.
**IPB80P03P4-05-VB** is a high-performance P-Channel MOSFET in TO263 package based on Trench technology. The MOSFET can withstand a drain-source voltage (VDS) of up to -30V and a continuous drain current (ID) of up to -100A. At VGS=10V, the on-resistance (RDS(ON)) is as low as 5mΩ, which can effectively reduce conduction losses and improve system efficiency. This makes **IPB80P03P4-05-VB** very suitable for high-efficiency power switching and load management applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -3V | -100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -3V | -100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -3V | -100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single-P-Channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3V
- **On-resistance (RDS(ON))**:
- 6.25mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum continuous current (ID)**: -100A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single-P-Channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3V
- **On-resistance (RDS(ON))**:
- 6.25mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum continuous current (ID)**: -100A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Power management and switching**:
**IPB80P03P4-05-VB**'s low on-resistance and high current handling capability make it suitable for power management and switching modules. In DC-DC converters, switching power supplies (SMPS) and power distribution systems, this MOSFET can efficiently switch current, reduce power losses, and improve the energy efficiency of the overall system.
2. **Load switching applications**:
As a P-Channel MOSFET, **IPB80P03P4-05-VB** is ideal for load switching applications such as battery protection circuits, overcurrent protection, and load switching systems. Its high current capability and low on-resistance enable it to reliably control high power loads and provide stable switching operations.
3. **Battery Management System**:
In the battery management system, **IPB80P03P4-05-VB** can efficiently manage the battery charge and discharge process due to its low on-resistance and high current carrying capacity. It can effectively control the battery charge and discharge path while protecting the battery from overcurrent and short circuit.
4. **Motor Drive and Control**:
**IPB80P03P4-05-VB** is suitable for motor drive systems, especially in high-power motor control. Its high current handling capability ensures stable operation of the motor, while the low conduction loss reduces heat generation in the system and improves the overall efficiency of the motor drive system.
1. **Power management and switching**:
**IPB80P03P4-05-VB**'s low on-resistance and high current handling capability make it suitable for power management and switching modules. In DC-DC converters, switching power supplies (SMPS) and power distribution systems, this MOSFET can efficiently switch current, reduce power losses, and improve the energy efficiency of the overall system.
2. **Load switching applications**:
As a P-Channel MOSFET, **IPB80P03P4-05-VB** is ideal for load switching applications such as battery protection circuits, overcurrent protection, and load switching systems. Its high current capability and low on-resistance enable it to reliably control high power loads and provide stable switching operations.
3. **Battery Management System**:
In the battery management system, **IPB80P03P4-05-VB** can efficiently manage the battery charge and discharge process due to its low on-resistance and high current carrying capacity. It can effectively control the battery charge and discharge path while protecting the battery from overcurrent and short circuit.
4. **Motor Drive and Control**:
**IPB80P03P4-05-VB** is suitable for motor drive systems, especially in high-power motor control. Its high current handling capability ensures stable operation of the motor, while the low conduction loss reduces heat generation in the system and improves the overall efficiency of the motor drive system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
