IPB80P03P3L-04-VB Product details
Product introduction:
IPB80P03P3L-04-VB is a high-performance P-channel MOSFET in TO263 package. With high current handling capability and low on-resistance, this MOSFET is particularly suitable for electronic circuits that require high efficiency and high reliability. Its key features include a drain-source voltage (VDS) of -30V, a gate-source voltage (VGS) of ±20V, and low on-resistance at different gate-source voltages. IPB80P03P3L-04-VB uses advanced Trench technology to provide excellent switching performance and thermal stability, suitable for a variety of high current and high power applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -3V | -100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -3V | -100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -3V | -100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
- **Package**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3V
- **On-resistance (RDS(ON))**: 6.25mΩ @ VGS=4.5V
- **On-resistance (RDS(ON))**: 5mΩ @ VGS=10V
- **Drain current (ID)**: -100A
- **Technology**: Trench
Domain and module applications:
1. **High-efficiency power management**
IPB80P03P3L-04-VB is an ideal choice for high-efficiency power management systems. Its low on-resistance and high drain current capability make it ideal for use in switching power supplies and DC-DC converters. These features can significantly reduce energy loss and improve system efficiency, especially in power modules and power protection circuits, which can effectively improve overall performance.
2. **Battery protection circuit**
In the battery protection circuit, this MOSFET can reliably control the battery charging and discharging process. Its high current handling capability and low on-resistance can prevent overcurrent and overdischarge, protecting the battery from damage. It is widely used in battery management systems for portable electronic devices such as laptops and mobile phones to ensure battery safety and durability.
3. **Power switches and inverters**
IPB80P03P3L-04-VB performs well in power switches and inverters. Its high current and low on-resistance characteristics enable it to handle high power loads, making it suitable for home inverters, solar inverters, and other power conversion applications. In environments that require frequent switching, the low power consumption characteristics of this MOSFET can effectively improve the overall energy efficiency of the system.
4. **Automotive Electronic Systems**
In automotive electronic systems, the high current capability and low on-resistance of the IPB80P03P3L-04-VB make it an ideal choice for automotive power windows, seat adjustment, and lighting systems. Its reliability and high efficiency can improve the performance and life of automotive electronic systems and meet the needs of various automotive electrical applications.
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