IPB80N08S2L-07-VB Product details
Product introduction:
IPB80N08S2L-07-VB is a high-efficiency single N-channel MOSFET in a TO263 package. Designed based on advanced Trench technology, this MOSFET provides excellent performance, especially for high voltage and high current applications. With a drain-source voltage of 80V, it can withstand drain currents up to 120A and has a low on-resistance (6mΩ at VGS = 10V), which helps reduce power losses. The design of this device makes it ideal for applications requiring high performance and reliability, such as power management, electric vehicles, and industrial control.
IPB80N08S2L-07-VB
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Package type: TO263
Configuration: Single N-channel
Drain-source voltage (VDS): 80V
Gate drive voltage (VGS): ±20V
Turn-on threshold voltage (Vth): 3V
On-resistance (RDS(ON)):
10mΩ @ VGS = 4.5V
6mΩ @ VGS = 10V
Maximum drain current (ID): 120A
Technology: Trench technology
Domain and module applications:
Power Management Systems: In the field of power management, the IPB80N08S2L-07-VB is suitable for high-current power converters and regulators. Its low on-resistance and high current handling capability enable it to effectively reduce power losses and improve power efficiency. Common applications include DC-DC converters, power distribution units (PDUs), etc.
Electric Vehicles (EVs) and Hybrid Vehicles: In the power systems of EVs and HEVs, this MOSFET can be used in battery management systems (BMS) and power distribution modules. Its high current carrying capacity and high voltage tolerance ensure the efficiency and reliability of the vehicle's electronic systems.
Industrial Automation and Motor Drives: In industrial automation equipment and motor drive systems, the high current and high voltage performance of the IPB80N08S2L-07-VB makes it ideal for use as a motor driver and power control module. It can stably handle high power loads and improve the overall efficiency of the system.
Switching Power Supplies (SMPS): This MOSFET is also suitable for switching power supply modules, such as computer power supplies and server power supplies. Its low on-resistance and excellent switching performance help achieve efficient power conversion and reduce switching losses, and is suitable for high-frequency switching operations.
The design and performance of the IPB80N08S2L-07-VB make it an ideal choice for a variety of high-current and high-voltage applications, especially in scenarios that require efficient power management and stable current control.
Technical support:
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