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IPB80N08S2-07-VB Product details
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Product Introduction
IPB80N08S2-07-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high voltage and high current applications. The MOSFET has a maximum drain-source voltage (VDS) of 80V and a maximum on-current (ID) of 120A. Its on-resistance is 10mΩ at a gate drive voltage of 4.5V and 6mΩ at 10V. These features enable it to perform well in high-efficiency power conversion and management applications. IPB80N08S2-07-VB uses advanced Trench technology to provide high-efficiency and low-power solutions in high-current applications.
IPB80N08S2-07-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high voltage and high current applications. The MOSFET has a maximum drain-source voltage (VDS) of 80V and a maximum on-current (ID) of 120A. Its on-resistance is 10mΩ at a gate drive voltage of 4.5V and 6mΩ at 10V. These features enable it to perform well in high-efficiency power conversion and management applications. IPB80N08S2-07-VB uses advanced Trench technology to provide high-efficiency and low-power solutions in high-current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throwing voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- @ VGS = 4.5V: 10mΩ
- @ VGS = 10V: 6mΩ
- **Maximum on-current (ID)**: 120A
- **Technology type**: Trench
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throwing voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- @ VGS = 4.5V: 10mΩ
- @ VGS = 10V: 6mΩ
- **Maximum on-current (ID)**: 120A
- **Technology type**: Trench
Domain and module applications：
Application fields and module examples
The high current capability and low on-resistance of IPB80N08S2-07-VB MOSFET enable it to excel in many fields. Here are some specific application scenarios:
1. **Switching Power Supply (SMPS)**:
- In the switching power supply system, this MOSFET is able to handle high current loads and provide stable switching performance. Its low on-resistance helps improve the energy efficiency of the system, reduce power consumption, and is suitable for high-efficiency power conversion applications.
2. **DC-DC converters**:
- IPB80N08S2-07-VB can be used for high current switching in DC-DC converters, optimize current management, and improve power conversion efficiency. It can support a variety of high-efficiency conversion needs, such as power modules in computers and communication equipment.
3. **Electric Vehicle Battery Management System (BMS)**:
- In the battery management system of electric vehicles, this MOSFET is used to manage the high current load of the battery to ensure the safety and efficiency of the battery. It is able to withstand high currents during battery discharge and charging, providing stable performance.
4. **Motor Drive System**:
- This MOSFET can be used in motor drive systems to support efficient driving of motors. Its low on-resistance and high current capability make it suitable for motor control applications that require high current.
5. **Industrial Power Control System**:
- In industrial power control systems, the IPB80N08S2-07-VB is able to provide reliable high-current switching to support the operation of high-power devices. It provides stable current management and efficient power conversion in these applications.
Due to its excellent performance and wide applicability, the IPB80N08S2-07-VB MOSFET is an ideal choice for multiple high-current and high-voltage applications.
The high current capability and low on-resistance of IPB80N08S2-07-VB MOSFET enable it to excel in many fields. Here are some specific application scenarios:
1. **Switching Power Supply (SMPS)**:
- In the switching power supply system, this MOSFET is able to handle high current loads and provide stable switching performance. Its low on-resistance helps improve the energy efficiency of the system, reduce power consumption, and is suitable for high-efficiency power conversion applications.
2. **DC-DC converters**:
- IPB80N08S2-07-VB can be used for high current switching in DC-DC converters, optimize current management, and improve power conversion efficiency. It can support a variety of high-efficiency conversion needs, such as power modules in computers and communication equipment.
3. **Electric Vehicle Battery Management System (BMS)**:
- In the battery management system of electric vehicles, this MOSFET is used to manage the high current load of the battery to ensure the safety and efficiency of the battery. It is able to withstand high currents during battery discharge and charging, providing stable performance.
4. **Motor Drive System**:
- This MOSFET can be used in motor drive systems to support efficient driving of motors. Its low on-resistance and high current capability make it suitable for motor control applications that require high current.
5. **Industrial Power Control System**:
- In industrial power control systems, the IPB80N08S2-07-VB is able to provide reliable high-current switching to support the operation of high-power devices. It provides stable current management and efficient power conversion in these applications.
Due to its excellent performance and wide applicability, the IPB80N08S2-07-VB MOSFET is an ideal choice for multiple high-current and high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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