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IPB80N06S4L-07-VB Product details
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1. Product Introduction
IPB80N06S4L-07-VB is a high-performance single N-channel MOSFET in TO263 package. It has a drain-source voltage (VDS) of 60V and a gate voltage (VGS) of ±20V, and is manufactured using Trench technology. The on-resistance (RDS(ON)) of this MOSFET is 4mΩ at VGS=10V, and it can withstand a drain current (ID) of up to 150A. This feature makes it particularly suitable for applications requiring high current and low voltage, such as efficient power converters, power tools, and electric vehicle battery management systems.
IPB80N06S4L-07-VB is a high-performance single N-channel MOSFET in TO263 package. It has a drain-source voltage (VDS) of 60V and a gate voltage (VGS) of ±20V, and is manufactured using Trench technology. The on-resistance (RDS(ON)) of this MOSFET is 4mΩ at VGS=10V, and it can withstand a drain current (ID) of up to 150A. This feature makes it particularly suitable for applications requiring high current and low voltage, such as efficient power converters, power tools, and electric vehicle battery management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Throwing voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Throwing voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
III. Application fields and module examples
1. **DC-DC converter**:
- **Application**: IPB80N06S4L-07-VB is widely used in DC-DC converters, especially when high-efficiency power management is required. Its low on-resistance and high current handling capability can significantly improve conversion efficiency and reduce power loss, and is suitable for high-efficiency power adapters, communication equipment, and computing equipment.
- **Example**: In the power module of a computer server, this MOSFET can help achieve more efficient voltage conversion and reduce the total power consumption of the system.
2. **Power tool drive**:
- **Application**: Power tools such as electric drills and electric saws require high current drive. The high current capability and low on-resistance of IPB80N06S4L-07-VB can effectively improve the performance and energy efficiency of the tools and extend battery life.
- **Example**: In the drive circuit of a power tool, MOSFET can be used to control the switching of the motor, thereby ensuring stable operation and high efficiency.
3. **Battery Management System (BMS) for Electric Vehicles**:
- **Application**: Battery management systems need to handle high currents to monitor and manage the charge and discharge process of battery packs. The high current capability and low on-resistance of the IPB80N06S4L-07-VB can provide stable and reliable power switching functions, improving the accuracy and safety of battery management.
- **Example**: In the battery management system of electric vehicles, this MOSFET can be used to control the charging and discharging process of the battery to optimize battery performance and life.
4. **Solar Inverter**:
- **Application**: In solar inverters, the high current handling capability and low on-resistance of MOSFETs are critical to the current conversion of solar cells. It can help improve the energy conversion efficiency of the system.
- **Example**: In the inverter of a solar power generation system, this MOSFET can effectively handle the current from the solar panel to achieve efficient power conversion and management.
5. **Power Management Module**:
- **Application**: IPB80N06S4L-07-VB is used in various power management modules, such as efficient power switching, power distribution and power regulation. It can provide reliable current control and conversion efficiency.
- **Example**: In an efficient power management system, MOSFET can be used in power switching and power regulation circuits to ensure efficient and stable operation of the power system.
IPB80N06S4L-07-VB is a high-performance, high-efficiency MOSFET suitable for various application scenarios requiring high current and low voltage, ensuring efficient and stable operation of the system.
1. **DC-DC converter**:
- **Application**: IPB80N06S4L-07-VB is widely used in DC-DC converters, especially when high-efficiency power management is required. Its low on-resistance and high current handling capability can significantly improve conversion efficiency and reduce power loss, and is suitable for high-efficiency power adapters, communication equipment, and computing equipment.
- **Example**: In the power module of a computer server, this MOSFET can help achieve more efficient voltage conversion and reduce the total power consumption of the system.
2. **Power tool drive**:
- **Application**: Power tools such as electric drills and electric saws require high current drive. The high current capability and low on-resistance of IPB80N06S4L-07-VB can effectively improve the performance and energy efficiency of the tools and extend battery life.
- **Example**: In the drive circuit of a power tool, MOSFET can be used to control the switching of the motor, thereby ensuring stable operation and high efficiency.
3. **Battery Management System (BMS) for Electric Vehicles**:
- **Application**: Battery management systems need to handle high currents to monitor and manage the charge and discharge process of battery packs. The high current capability and low on-resistance of the IPB80N06S4L-07-VB can provide stable and reliable power switching functions, improving the accuracy and safety of battery management.
- **Example**: In the battery management system of electric vehicles, this MOSFET can be used to control the charging and discharging process of the battery to optimize battery performance and life.
4. **Solar Inverter**:
- **Application**: In solar inverters, the high current handling capability and low on-resistance of MOSFETs are critical to the current conversion of solar cells. It can help improve the energy conversion efficiency of the system.
- **Example**: In the inverter of a solar power generation system, this MOSFET can effectively handle the current from the solar panel to achieve efficient power conversion and management.
5. **Power Management Module**:
- **Application**: IPB80N06S4L-07-VB is used in various power management modules, such as efficient power switching, power distribution and power regulation. It can provide reliable current control and conversion efficiency.
- **Example**: In an efficient power management system, MOSFET can be used in power switching and power regulation circuits to ensure efficient and stable operation of the power system.
IPB80N06S4L-07-VB is a high-performance, high-efficiency MOSFET suitable for various application scenarios requiring high current and low voltage, ensuring efficient and stable operation of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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