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IPB80N06S4-07-VB Product details
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Product Introduction:
IPB80N06S4-07-VB is a high-performance single N-channel MOSFET in TO263 package, specially designed for high current and high efficiency switching applications. It has a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, and can handle drain currents up to 210A. The MOSFET has an on-resistance (RDS(ON)) of 3.2mΩ at VGS of 10V and 12mΩ at VGS of 4.5V, providing excellent conductivity and low power loss. It uses Trench technology, which gives it excellent performance in current handling capability and switching efficiency, and is suitable for a variety of high-efficiency power supplies and switching modules.
IPB80N06S4-07-VB is a high-performance single N-channel MOSFET in TO263 package, specially designed for high current and high efficiency switching applications. It has a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, and can handle drain currents up to 210A. The MOSFET has an on-resistance (RDS(ON)) of 3.2mΩ at VGS of 10V and 12mΩ at VGS of 4.5V, providing excellent conductivity and low power loss. It uses Trench technology, which gives it excellent performance in current handling capability and switching efficiency, and is suitable for a variety of high-efficiency power supplies and switching modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | 3.2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3.2mΩ @ VGS=10V
- 12mΩ @ VGS=4.5V
- **Drain current (ID)**: 210A
- **Technology**: Trench technology, providing low conduction loss and high current handling capability
- **Thermal resistance (Rth(ja))**: Typical value is about 62 K/W
- **Junction temperature range**: -55°C to +175°C
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3.2mΩ @ VGS=10V
- 12mΩ @ VGS=4.5V
- **Drain current (ID)**: 210A
- **Technology**: Trench technology, providing low conduction loss and high current handling capability
- **Thermal resistance (Rth(ja))**: Typical value is about 62 K/W
- **Junction temperature range**: -55°C to +175°C
Domain and module applications：
Applicable fields and module applications:
1. **High-efficiency power management**:
IPB80N06S4-07-VB is widely used in high-efficiency power management systems, such as computer power supplies, server power supplies, and other high-power power supplies. Its low on-resistance and high current handling capability can effectively reduce energy loss and improve the overall efficiency of the system.
2. **Electric vehicle (EV) drive module**:
Due to its high current capability and low on-resistance, IPB80N06S4-07-VB is suitable for use in drive modules and battery management systems for electric vehicles. In electric vehicles, this MOSFET can effectively control the battery charging and discharging process, optimize energy transfer and increase the battery life.
3. **DC-DC converter**:
This MOSFET can be used as an efficient switching element in the DC-DC converter to support voltage conversion and power management. Its excellent switching characteristics and low conduction loss help improve the efficiency of the converter, reduce power loss, and is suitable for various voltage conversion applications.
4. **Motor Control**:
In motor control applications, the IPB80N06S4-07-VB can be used in high current motor drive circuits. Its high current handling capability and low power loss characteristics can improve the performance of motor drives, increase system reliability and efficiency, and are suitable for applications such as industrial motors and automotive motors.
5. **Industrial Automation**:
In the field of industrial automation, the IPB80N06S4-07-VB can be used as a switching element in various automation equipment and drive modules. Its high current capability and low loss characteristics make it an ideal choice for improving the performance and stability of industrial equipment.
With its high current handling capability and low conduction loss, this MOSFET can play an important role in many fields, including power management, electric vehicles, motor control and industrial automation.
1. **High-efficiency power management**:
IPB80N06S4-07-VB is widely used in high-efficiency power management systems, such as computer power supplies, server power supplies, and other high-power power supplies. Its low on-resistance and high current handling capability can effectively reduce energy loss and improve the overall efficiency of the system.
2. **Electric vehicle (EV) drive module**:
Due to its high current capability and low on-resistance, IPB80N06S4-07-VB is suitable for use in drive modules and battery management systems for electric vehicles. In electric vehicles, this MOSFET can effectively control the battery charging and discharging process, optimize energy transfer and increase the battery life.
3. **DC-DC converter**:
This MOSFET can be used as an efficient switching element in the DC-DC converter to support voltage conversion and power management. Its excellent switching characteristics and low conduction loss help improve the efficiency of the converter, reduce power loss, and is suitable for various voltage conversion applications.
4. **Motor Control**:
In motor control applications, the IPB80N06S4-07-VB can be used in high current motor drive circuits. Its high current handling capability and low power loss characteristics can improve the performance of motor drives, increase system reliability and efficiency, and are suitable for applications such as industrial motors and automotive motors.
5. **Industrial Automation**:
In the field of industrial automation, the IPB80N06S4-07-VB can be used as a switching element in various automation equipment and drive modules. Its high current capability and low loss characteristics make it an ideal choice for improving the performance and stability of industrial equipment.
With its high current handling capability and low conduction loss, this MOSFET can play an important role in many fields, including power management, electric vehicles, motor control and industrial automation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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