中文
English
IPB80N06S4-05-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
**IPB80N06S4-05-VB** is a high-performance single N-channel MOSFET in TO263 package. It supports a drain-source voltage (VDS) of up to 60V, a gate-source voltage (VGS) range of ±20V, and a turn-on voltage (Vth) of 3V. This MOSFET uses Trench technology to provide an on-resistance (RDS(ON)) as low as 4mΩ at VGS=10V and can handle a drain current (ID) of up to 150A. This series of parameters makes the IPB80N06S4-05-VB very suitable for applications that require low on-resistance and high current handling capabilities.
**IPB80N06S4-05-VB** is a high-performance single N-channel MOSFET in TO263 package. It supports a drain-source voltage (VDS) of up to 60V, a gate-source voltage (VGS) range of ±20V, and a turn-on voltage (Vth) of 3V. This MOSFET uses Trench technology to provide an on-resistance (RDS(ON)) as low as 4mΩ at VGS=10V and can handle a drain current (ID) of up to 150A. This series of parameters makes the IPB80N06S4-05-VB very suitable for applications that require low on-resistance and high current handling capabilities.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Model**: IPB80N06S4-05-VB
- **Package**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-up voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 175°C
- **Power handling capability**: Excellent low conduction loss, suitable for high current applications
- **Switching speed**: Ideal for high-speed switching applications
- **Model**: IPB80N06S4-05-VB
- **Package**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-up voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 175°C
- **Power handling capability**: Excellent low conduction loss, suitable for high current applications
- **Switching speed**: Ideal for high-speed switching applications
Domain and module applications：
3. Applicable fields and modules
**IPB80N06S4-05-VB** MOSFET's high current handling capability and low on-resistance make it very useful in multiple fields:
- **Power management**: This MOSFET is suitable for DC-DC converters, voltage regulation modules and power switches. Due to its low on-resistance, it can effectively reduce power loss and improve power efficiency, and is particularly suitable for use in computer power supplies, servers and high-efficiency power supply systems.
- **Automotive electronics**: In automotive electronic systems, especially electric vehicles (EV) and hybrid electric vehicles (HEV), this MOSFET can provide stable performance in battery management systems, drive control modules and high-power switches, enhancing system reliability and efficiency.
- **Industrial applications**: In industrial automation and motor control systems, IPB80N06S4-05-VB provides high current handling capability and low power loss, suitable for high-power switching and load regulation, improving the overall performance and durability of the equipment.
- **Consumer Electronics**: In consumer electronics, such as power adapters and home appliances, this MOSFET can be used for efficient power conversion and load control, reducing energy consumption and improving the efficiency of equipment.
- **Solar Inverters**: The low on-resistance of this MOSFET makes it suitable for solar inverters, which can effectively handle high currents and improve the energy conversion efficiency of the system, supporting the optimization of renewable energy systems.
**IPB80N06S4-05-VB** Due to its excellent electrical performance and high current handling capability, it is widely used in power management, automotive electronics, industrial automation, consumer electronics and solar inverters.
**IPB80N06S4-05-VB** MOSFET's high current handling capability and low on-resistance make it very useful in multiple fields:
- **Power management**: This MOSFET is suitable for DC-DC converters, voltage regulation modules and power switches. Due to its low on-resistance, it can effectively reduce power loss and improve power efficiency, and is particularly suitable for use in computer power supplies, servers and high-efficiency power supply systems.
- **Automotive electronics**: In automotive electronic systems, especially electric vehicles (EV) and hybrid electric vehicles (HEV), this MOSFET can provide stable performance in battery management systems, drive control modules and high-power switches, enhancing system reliability and efficiency.
- **Industrial applications**: In industrial automation and motor control systems, IPB80N06S4-05-VB provides high current handling capability and low power loss, suitable for high-power switching and load regulation, improving the overall performance and durability of the equipment.
- **Consumer Electronics**: In consumer electronics, such as power adapters and home appliances, this MOSFET can be used for efficient power conversion and load control, reducing energy consumption and improving the efficiency of equipment.
- **Solar Inverters**: The low on-resistance of this MOSFET makes it suitable for solar inverters, which can effectively handle high currents and improve the energy conversion efficiency of the system, supporting the optimization of renewable energy systems.
**IPB80N06S4-05-VB** Due to its excellent electrical performance and high current handling capability, it is widely used in power management, automotive electronics, industrial automation, consumer electronics and solar inverters.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
