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IPB80N06S3L-06-VB Product details
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1. IPB80N06S3L-06-VB MOSFET Product Introduction
IPB80N06S3L-06-VB is a high-performance N-channel power MOSFET in TO-263 package. With a maximum drain-source voltage (VDS) of 60V and a maximum continuous drain current (ID) of 150A, the device is designed for high current loads and high-efficiency applications. Its gate threshold voltage (Vth) is 3V, ensuring that the device can operate stably at a lower gate voltage. The on-resistance (RDS(ON)) is 4mΩ (@VGS=10V), providing excellent conductivity and low power consumption. Using advanced Trench technology, this MOSFET is suitable for applications that require high current handling capability and low power consumption.
IPB80N06S3L-06-VB is a high-performance N-channel power MOSFET in TO-263 package. With a maximum drain-source voltage (VDS) of 60V and a maximum continuous drain current (ID) of 150A, the device is designed for high current loads and high-efficiency applications. Its gate threshold voltage (Vth) is 3V, ensuring that the device can operate stably at a lower gate voltage. The on-resistance (RDS(ON)) is 4mΩ (@VGS=10V), providing excellent conductivity and low power consumption. Using advanced Trench technology, this MOSFET is suitable for applications that require high current handling capability and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description of IPB80N06S3L-06-VB MOSFET
- **Package type**: TO-263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 150A
- **Technology type**: Trench technology
- **Package type**: TO-263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 150A
- **Technology type**: Trench technology
Domain and module applications：
III. Application fields and module examples of IPB80N06S3L-06-VB
1. **Power management system**: In high-efficiency power management systems, IPB80N06S3L-06-VB is suitable for DC-DC converters and power modules. Its low on-resistance and high current handling capability enable it to achieve high efficiency and low power consumption in power conversion, and is suitable for computer power supplies, industrial power supplies, and power modules in communication equipment.
2. **Electric vehicles and hybrid vehicles**: In motor drives and battery management systems for electric and hybrid vehicles, this MOSFET is able to handle high current loads and provide low power operation. Its high current handling capability and low on-resistance make it suitable for battery charge and discharge control, motor drives, and other power management applications.
3. **High-efficiency switching applications**: IPB80N06S3L-06-VB is ideal for switching applications that require high current and high efficiency, such as LED drive circuits, switching power supplies, and power amplifiers. Its fast switching capability and low on-resistance enable it to provide stable performance and low power consumption in high-power applications.
4. **Industrial Automation**: In industrial automation systems, such as motor control and high-power load switching, IPB80N06S3L-06-VB can provide efficient switching solutions. Its high current handling capability and low conduction loss ensure reliability and efficiency in high-load environments.
In summary, IPB80N06S3L-06-VB MOSFET is widely used in power management, electric vehicles, motor drives and industrial automation due to its excellent current handling capability, low on-resistance and high-efficiency switching characteristics, providing stable and efficient solutions for various high-power and high-efficiency applications.
1. **Power management system**: In high-efficiency power management systems, IPB80N06S3L-06-VB is suitable for DC-DC converters and power modules. Its low on-resistance and high current handling capability enable it to achieve high efficiency and low power consumption in power conversion, and is suitable for computer power supplies, industrial power supplies, and power modules in communication equipment.
2. **Electric vehicles and hybrid vehicles**: In motor drives and battery management systems for electric and hybrid vehicles, this MOSFET is able to handle high current loads and provide low power operation. Its high current handling capability and low on-resistance make it suitable for battery charge and discharge control, motor drives, and other power management applications.
3. **High-efficiency switching applications**: IPB80N06S3L-06-VB is ideal for switching applications that require high current and high efficiency, such as LED drive circuits, switching power supplies, and power amplifiers. Its fast switching capability and low on-resistance enable it to provide stable performance and low power consumption in high-power applications.
4. **Industrial Automation**: In industrial automation systems, such as motor control and high-power load switching, IPB80N06S3L-06-VB can provide efficient switching solutions. Its high current handling capability and low conduction loss ensure reliability and efficiency in high-load environments.
In summary, IPB80N06S3L-06-VB MOSFET is widely used in power management, electric vehicles, motor drives and industrial automation due to its excellent current handling capability, low on-resistance and high-efficiency switching characteristics, providing stable and efficient solutions for various high-power and high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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