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IPB80N06S3-05-VB Product details
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IPB80N06S3-05-VB Product Introduction
IPB80N06S3-05-VB is a high-performance N-type power MOSFET in TO263 package, designed for high current and high efficiency applications. This MOSFET has a maximum drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) range of 20V, and a threshold voltage (Vth) of 3V. It is based on advanced Trench technology, providing excellent switching performance and low on-resistance. In particular, when VGS=10V, the on-resistance (RDS(ON)) is 4mΩ, supporting a drain current of up to 150A. This makes IPB80N06S3-05-VB an ideal choice for high power density and low energy consumption applications.
IPB80N06S3-05-VB is a high-performance N-type power MOSFET in TO263 package, designed for high current and high efficiency applications. This MOSFET has a maximum drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) range of 20V, and a threshold voltage (Vth) of 3V. It is based on advanced Trench technology, providing excellent switching performance and low on-resistance. In particular, when VGS=10V, the on-resistance (RDS(ON)) is 4mΩ, supporting a drain current of up to 150A. This makes IPB80N06S3-05-VB an ideal choice for high power density and low energy consumption applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IPB80N06S3-05-VB Parameter Description
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ@VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ@VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
Application fields and modules of IPB80N06S3-05-VB
1. **Power management**: IPB80N06S3-05-VB performs well in power management applications such as DC-DC converters and synchronous rectification modules. Its low on-resistance and high current handling capability help improve power conversion efficiency and reduce energy loss, and is suitable for application scenarios that require efficient energy conversion.
2. **Electric vehicles**: In the field of electric vehicles, this MOSFET can be used in key modules such as battery management systems, motor drives, and charging control. Its high current carrying capacity and low on-resistance ensure the stability and efficiency of electric vehicles under high load conditions.
3. **Industrial control**: IPB80N06S3-05-VB is suitable for industrial power supplies and motor control systems. Its high current handling capability and low on-resistance make it an ideal choice for high current drive and high frequency switching applications, which can effectively improve the performance and reliability of industrial equipment.
4. **Consumer Electronics**: In high-performance consumer electronics, such as high-efficiency power adapters and game consoles, this MOSFET can provide stable power support and efficient current management. Its low power consumption can extend the life of the device and improve overall performance.
5. **Data Center and Server**: IPB80N06S3-05-VB is suitable for high-current switch modules in data center and server power systems. Its low on-resistance and high current handling capability can significantly improve the energy efficiency and system stability of data centers.
1. **Power management**: IPB80N06S3-05-VB performs well in power management applications such as DC-DC converters and synchronous rectification modules. Its low on-resistance and high current handling capability help improve power conversion efficiency and reduce energy loss, and is suitable for application scenarios that require efficient energy conversion.
2. **Electric vehicles**: In the field of electric vehicles, this MOSFET can be used in key modules such as battery management systems, motor drives, and charging control. Its high current carrying capacity and low on-resistance ensure the stability and efficiency of electric vehicles under high load conditions.
3. **Industrial control**: IPB80N06S3-05-VB is suitable for industrial power supplies and motor control systems. Its high current handling capability and low on-resistance make it an ideal choice for high current drive and high frequency switching applications, which can effectively improve the performance and reliability of industrial equipment.
4. **Consumer Electronics**: In high-performance consumer electronics, such as high-efficiency power adapters and game consoles, this MOSFET can provide stable power support and efficient current management. Its low power consumption can extend the life of the device and improve overall performance.
5. **Data Center and Server**: IPB80N06S3-05-VB is suitable for high-current switch modules in data center and server power systems. Its low on-resistance and high current handling capability can significantly improve the energy efficiency and system stability of data centers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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