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IPB80N06S2L-07-VB Product details
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Product Introduction
**IPB80N06S2L-07-VB** is a high-performance N-Channel MOSFET in TO263 package based on Trench technology. This MOSFET is designed for high-efficiency switching applications and can withstand a maximum drain-source voltage (VDS) of 60V and a continuous current (ID) of 150A. Its on-resistance (RDS(ON)) is as low as 4mΩ at VGS=10V, which can reduce conduction losses and improve energy conversion efficiency. It is very suitable for use in high-current, high-efficiency power management and switching circuits.
**IPB80N06S2L-07-VB** is a high-performance N-Channel MOSFET in TO263 package based on Trench technology. This MOSFET is designed for high-efficiency switching applications and can withstand a maximum drain-source voltage (VDS) of 60V and a continuous current (ID) of 150A. Its on-resistance (RDS(ON)) is as low as 4mΩ at VGS=10V, which can reduce conduction losses and improve energy conversion efficiency. It is very suitable for use in high-current, high-efficiency power management and switching circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Maximum continuous current (ID)**: 150A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Maximum continuous current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Automotive electronic systems**:
**IPB80N06S2L-07-VB**'s high current handling capability and low on-resistance make it ideal for power management modules in automotive electronic systems, such as electric power steering systems (EPS) and electric seat controls. These systems require high-efficiency and high-reliability power conversion and control, and the efficient switching characteristics of this MOSFET help achieve these goals.
2. **Switching power supply (SMPS)**:
In switching mode power supplies, **IPB80N06S2L-07-VB** provides efficient power conversion and is suitable for use in high-power DC-DC converters and AC-DC power supplies. Its low on-resistance and high current capability ensure lower power losses and help improve the energy efficiency of the entire system.
3. **Motor Control and Drive**:
**IPB80N06S2L-07-VB** is ideal for motor control and drive applications, especially brushless DC motor (BLDC) drives in industrial automation and home appliances. Its high current carrying capacity provides stable current output, while low conduction losses reduce heat generation in the system and improve the efficiency of the drive system.
4. **Load Switch and Distributed Power Management**:
This MOSFET excels in high-power load switching applications. Its high current carrying capacity and fast switching characteristics make it ideal for distributed power management modules in servers, communication equipment, and data centers, which can efficiently switch power paths, reduce energy waste, and ensure stable operation of the system.
1. **Automotive electronic systems**:
**IPB80N06S2L-07-VB**'s high current handling capability and low on-resistance make it ideal for power management modules in automotive electronic systems, such as electric power steering systems (EPS) and electric seat controls. These systems require high-efficiency and high-reliability power conversion and control, and the efficient switching characteristics of this MOSFET help achieve these goals.
2. **Switching power supply (SMPS)**:
In switching mode power supplies, **IPB80N06S2L-07-VB** provides efficient power conversion and is suitable for use in high-power DC-DC converters and AC-DC power supplies. Its low on-resistance and high current capability ensure lower power losses and help improve the energy efficiency of the entire system.
3. **Motor Control and Drive**:
**IPB80N06S2L-07-VB** is ideal for motor control and drive applications, especially brushless DC motor (BLDC) drives in industrial automation and home appliances. Its high current carrying capacity provides stable current output, while low conduction losses reduce heat generation in the system and improve the efficiency of the drive system.
4. **Load Switch and Distributed Power Management**:
This MOSFET excels in high-power load switching applications. Its high current carrying capacity and fast switching characteristics make it ideal for distributed power management modules in servers, communication equipment, and data centers, which can efficiently switch power paths, reduce energy waste, and ensure stable operation of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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