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IPB80N06S2L-05-VB Product details
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**
IPB80N06S2L-05-VB is a high current capacity N-channel MOSFET packaged in TO263 using Trench technology. This MOSFET has a drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) of ±20V, and a very low on-resistance (RDS(ON)) of 12mΩ at VGS=4.5V and 3.2mΩ at VGS=10V. Its maximum drain current (ID) is 210A, making it suitable for high current applications requiring efficient switching.
**IPB80N06S2L-05-VB
IPB80N06S2L-05-VB is a high current capacity N-channel MOSFET packaged in TO263 using Trench technology. This MOSFET has a drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) of ±20V, and a very low on-resistance (RDS(ON)) of 12mΩ at VGS=4.5V and 3.2mΩ at VGS=10V. Its maximum drain current (ID) is 210A, making it suitable for high current applications requiring efficient switching.
**IPB80N06S2L-05-VB
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | 3.2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
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- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage(VDS)**: 60V
- **Gate-source voltage(VGS)**: ±20V
- **Threshold voltage(Vth)**: 3V
- **On-resistance(RDS(ON))**: 12mΩ @ VGS=4.5V
- **On-resistance(RDS(ON))**: 3.2mΩ @ VGS=10V
- **Drain current(ID)**: 210A
- **Technology**: Trench
**
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage(VDS)**: 60V
- **Gate-source voltage(VGS)**: ±20V
- **Threshold voltage(Vth)**: 3V
- **On-resistance(RDS(ON))**: 12mΩ @ VGS=4.5V
- **On-resistance(RDS(ON))**: 3.2mΩ @ VGS=10V
- **Drain current(ID)**: 210A
- **Technology**: Trench
**
Domain and module applications：
1. **High-current motor control system**
IPB80N06S2L-05-VB is ideal for motor drive and control systems, especially high-power motor drive applications. Its high current capability and low on-resistance ensure reduced energy loss when running at high current, thereby improving motor drive efficiency, suitable for automotive motor control and industrial automation fields.
2. **High-efficiency DC-DC converter**
In high-efficiency DC-DC converters, the low on-resistance of this MOSFET helps reduce heat and energy loss generated during the conversion process. Its high current capability enables it to carry high-power loads and is widely used in server power management, industrial power conversion, and power modules for communication base stations.
3. **Uninterruptible power supply (UPS) system**
IPB80N06S2L-05-VB is suitable for uninterruptible power supply systems, which can quickly respond to load changes and maintain low losses during high power transmission. It provides stable power to key equipment and is widely used in power management of data centers, telecommunications equipment, and medical equipment.
4. **Solar Inverter**
Due to its efficient switching capability and low on-resistance, this MOSFET is suitable for use in solar inverter designs. It can efficiently convert DC to AC and minimize energy losses during the conversion process, making it an excellent performer in photovoltaic power generation systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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