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IPB80N06S2-H5-VB Product details
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IPB80N06S2-H5-VB Product Introduction
IPB80N06S2-H5-VB is a high-performance single N-channel MOSFET in TO263 package and designed based on Trench technology, designed for high-power and high-current applications. With a drain-source voltage of 60V, a maximum drain current of 150A and a low on-resistance (4mΩ), this MOSFET performs well in efficient power management and fast switching. This device is widely used in demanding industrial, automotive and power management systems.
IPB80N06S2-H5-VB is a high-performance single N-channel MOSFET in TO263 package and designed based on Trench technology, designed for high-power and high-current applications. With a drain-source voltage of 60V, a maximum drain current of 150A and a low on-resistance (4mΩ), this MOSFET performs well in efficient power management and fast switching. This device is widely used in demanding industrial, automotive and power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IPB80N06S2-H5-VB Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate drive voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench technology
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate drive voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Automotive power management**: The IPB80N06S2-H5-VB is widely used in power management modules in automobiles, such as power distribution units (PDUs) and battery management systems (BMS). Its high current handling capability and low on-resistance enable it to provide efficient current transmission and power conversion in automotive electrical systems, especially suitable for electric vehicles and hybrid vehicles.
2. **Industrial control equipment**: In industrial motor control and power transmission systems, this MOSFET can cope with high power demands and provide stable and reliable current control. It can maintain low power consumption under high current loads, helping to improve the overall performance and efficiency of industrial equipment.
3. **Switching power supply (SMPS)**: This MOSFET is used in switching power supplies to handle high-frequency switching operations, providing efficient power conversion and power management. Its low on-resistance ensures less energy loss, suitable for use in efficient power modules, such as server power supplies and power management units for computer motherboards.
4. **Photovoltaic Inverter**: In solar photovoltaic systems, the IPB80N06S2-H5-VB can be used in photovoltaic inverter modules to handle the conversion from DC to AC. Its high current capability and low loss characteristics enable high-efficiency power output in energy conversion.
The device is suitable for any application scenario that requires efficient current control and low power consumption, especially in power management, electric vehicles, industrial control and new energy fields.
1. **Automotive power management**: The IPB80N06S2-H5-VB is widely used in power management modules in automobiles, such as power distribution units (PDUs) and battery management systems (BMS). Its high current handling capability and low on-resistance enable it to provide efficient current transmission and power conversion in automotive electrical systems, especially suitable for electric vehicles and hybrid vehicles.
2. **Industrial control equipment**: In industrial motor control and power transmission systems, this MOSFET can cope with high power demands and provide stable and reliable current control. It can maintain low power consumption under high current loads, helping to improve the overall performance and efficiency of industrial equipment.
3. **Switching power supply (SMPS)**: This MOSFET is used in switching power supplies to handle high-frequency switching operations, providing efficient power conversion and power management. Its low on-resistance ensures less energy loss, suitable for use in efficient power modules, such as server power supplies and power management units for computer motherboards.
4. **Photovoltaic Inverter**: In solar photovoltaic systems, the IPB80N06S2-H5-VB can be used in photovoltaic inverter modules to handle the conversion from DC to AC. Its high current capability and low loss characteristics enable high-efficiency power output in energy conversion.
The device is suitable for any application scenario that requires efficient current control and low power consumption, especially in power management, electric vehicles, industrial control and new energy fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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