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IPB80N06S2-05-VB Product details
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Product Introduction
IPB80N06S2-05-VB is a single N-channel MOSFET in TO263 package with 60V drain-source voltage (VDS) and 150A maximum on-current (ID). Its on-resistance (RDS(ON)) is only 4mΩ at a gate drive voltage of 10V, ensuring excellent switching performance and low power consumption. Based on the structural design of Trench technology, this MOSFET can provide high efficiency and high current handling capability, suitable for applications requiring high power and high performance.
IPB80N06S2-05-VB is a single N-channel MOSFET in TO263 package with 60V drain-source voltage (VDS) and 150A maximum on-current (ID). Its on-resistance (RDS(ON)) is only 4mΩ at a gate drive voltage of 10V, ensuring excellent switching performance and low power consumption. Based on the structural design of Trench technology, this MOSFET can provide high efficiency and high current handling capability, suitable for applications requiring high power and high performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- @ VGS = 10V: 4mΩ
- **Maximum on-current (ID)**: 150A
- **Technology type**: Trench
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- @ VGS = 10V: 4mΩ
- **Maximum on-current (ID)**: 150A
- **Technology type**: Trench
Domain and module applications：
Applications and module examples: IPB80N06S2-05-VB MOSFET is suitable for multiple high-power applications. First, it is very suitable for use in **automotive electronics**, especially in battery management systems (BMS), where it can handle high currents and maintain low conduction losses, thereby extending battery life and improving system efficiency. Secondly, in **DC-DC converters** and **switching power supplies (SMPS), it can effectively switch at high currents with extremely low on-resistance, greatly reducing the energy loss of the system. This MOSFET can also be used in **industrial motor drive systems** to help control the efficient operation of the motor, especially in high current situations that require frequent switching. In addition, IPB80N06S2-05-VB also performs well in **solar inverters**, which can effectively handle the current from solar panels and ensure efficient energy conversion. This MOSFET is widely used in **high-power switching modules**, **power tools** and other equipment that require efficient switching and high current carrying capacity.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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