中文
English
IPB80N04S4-03-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
IPB80N04S4-03-VB is a single N-channel MOSFET in TO263 package with 40V drain-source voltage (VDS) and ±20V gate voltage (VGS), suitable for high current and low voltage power switching applications. The on-resistance (RDS(ON)) of this MOSFET is 2.5mΩ at VGS=4.5V and 2mΩ at VGS=10V, and it can handle drain currents up to 150A. The design based on Trench technology gives it low on-resistance and excellent switching performance, making it very suitable for high-efficiency power conversion and management applications.
IPB80N04S4-03-VB is a single N-channel MOSFET in TO263 package with 40V drain-source voltage (VDS) and ±20V gate voltage (VGS), suitable for high current and low voltage power switching applications. The on-resistance (RDS(ON)) of this MOSFET is 2.5mΩ at VGS=4.5V and 2mΩ at VGS=10V, and it can handle drain currents up to 150A. The design based on Trench technology gives it low on-resistance and excellent switching performance, making it very suitable for high-efficiency power conversion and management applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
3. Application fields and module examples
1. **DC-DC converter**: The high current handling capability and low on-resistance of IPB80N04S4-03-VB make it very suitable for use in DC-DC power converters. This MOSFET can ensure efficient power transmission, especially in high current density and low voltage environments, and is often used in power management modules of communication equipment, servers and computing equipment.
2. **Power tools**: This MOSFET performs well in power tool drive circuits and can handle currents up to 150A to ensure stable motor drive. The low on-resistance of this MOSFET can reduce power loss and improve the battery life and work efficiency of power tools.
3. **Electric vehicle battery management system (BMS)**: In the battery management system of electric vehicles, the low on-resistance and high current handling capability of IPB80N04S4-03-VB enable it to efficiently control the charging and discharging process of the battery pack, ensuring the safety and life of the battery.
4. **Server and Data Center Power Management**: Data centers and servers have very high requirements for power conversion efficiency. This MOSFET can provide efficient switching and low loss for the power management module, especially in high current processing environments, improving the power consumption efficiency of the overall system.
5. **Solar Inverter**: In solar inverter applications, this MOSFET can efficiently handle the current conversion from the solar panel. Its high current carrying capacity makes it suitable for handling the high power requirements of solar systems while providing stable voltage conversion.
IPB80N04S4-03-VB performs well in applications such as power management, DC-DC conversion, and battery management systems. It is suitable for low-voltage and high-current scenarios, especially in areas that require high efficiency and high current processing.
1. **DC-DC converter**: The high current handling capability and low on-resistance of IPB80N04S4-03-VB make it very suitable for use in DC-DC power converters. This MOSFET can ensure efficient power transmission, especially in high current density and low voltage environments, and is often used in power management modules of communication equipment, servers and computing equipment.
2. **Power tools**: This MOSFET performs well in power tool drive circuits and can handle currents up to 150A to ensure stable motor drive. The low on-resistance of this MOSFET can reduce power loss and improve the battery life and work efficiency of power tools.
3. **Electric vehicle battery management system (BMS)**: In the battery management system of electric vehicles, the low on-resistance and high current handling capability of IPB80N04S4-03-VB enable it to efficiently control the charging and discharging process of the battery pack, ensuring the safety and life of the battery.
4. **Server and Data Center Power Management**: Data centers and servers have very high requirements for power conversion efficiency. This MOSFET can provide efficient switching and low loss for the power management module, especially in high current processing environments, improving the power consumption efficiency of the overall system.
5. **Solar Inverter**: In solar inverter applications, this MOSFET can efficiently handle the current conversion from the solar panel. Its high current carrying capacity makes it suitable for handling the high power requirements of solar systems while providing stable voltage conversion.
IPB80N04S4-03-VB performs well in applications such as power management, DC-DC conversion, and battery management systems. It is suitable for low-voltage and high-current scenarios, especially in areas that require high efficiency and high current processing.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
