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IPB80N04S3-03-VB Product details
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Product Introduction:
IPB80N04S3-03-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high-efficiency power management and high-current applications. Its maximum drain-source voltage (VDS) is 40V, the gate-source voltage (VGS) is ±20V, and the drain current (ID) can reach up to 150A, which can handle high-current applications. The on-resistance (RDS(ON)) of this MOSFET is 2mΩ at VGS of 10V and 2.5mΩ at VGS of 4.5V, which can significantly reduce conduction losses. It uses Trench technology, which makes it have excellent performance in current handling capability and efficiency, and is very suitable for power management and high-efficiency switching applications.
IPB80N04S3-03-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high-efficiency power management and high-current applications. Its maximum drain-source voltage (VDS) is 40V, the gate-source voltage (VGS) is ±20V, and the drain current (ID) can reach up to 150A, which can handle high-current applications. The on-resistance (RDS(ON)) of this MOSFET is 2mΩ at VGS of 10V and 2.5mΩ at VGS of 4.5V, which can significantly reduce conduction losses. It uses Trench technology, which makes it have excellent performance in current handling capability and efficiency, and is very suitable for power management and high-efficiency switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2mΩ @ VGS=10V
- 2.5mΩ @ VGS=4.5V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology, providing low conduction loss and high current handling capability
- **Thermal resistance (Rth(ja))**: Typical value is about 62 K/W
- **Junction temperature range**: -55°C to +175°C
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2mΩ @ VGS=10V
- 2.5mΩ @ VGS=4.5V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology, providing low conduction loss and high current handling capability
- **Thermal resistance (Rth(ja))**: Typical value is about 62 K/W
- **Junction temperature range**: -55°C to +175°C
Domain and module applications：
Applicable fields and module applications:
1. **Power management system**: IPB80N04S3-03-VB is particularly suitable for high-current power management systems, providing efficient switching performance and low conduction losses, improving the energy efficiency of the entire power management system. Its high current handling capability enables it to be used in high-power power management and high-current applications such as server power supplies, computer power supplies, etc.
2. **Motor control**: Due to its high current and low conduction losses, IPB80N04S3-03-VB is suitable for motor drive and control circuits, especially in industrial and automotive motor control. It can effectively manage the start and stop of the motor while reducing energy loss and improving the overall efficiency and life of the motor system.
3. **DC-DC converter**: In DC-DC converter applications, IPB80N04S3-03-VB can be used as an efficient switching element to support voltage conversion and power management. Its low on-resistance and high-efficiency switching characteristics enable it to improve converter efficiency and reduce power loss, making it suitable for a variety of voltage conversion applications.
4. **Electric Vehicle (EV) Battery Management**: This MOSFET can be used in the battery management system (BMS) of electric vehicles to play a switching control role during the battery charging and discharging process. Its high current capability and low conduction loss help improve the energy efficiency and battery life of electric vehicles while ensuring the stability and safety of the system.
5. **Industrial Automation and Drive Modules**: The IPB80N04S3-03-VB is suitable for high-efficiency switching applications in the field of industrial automation, such as automatic control and drive modules for industrial equipment. It can withstand high current loads and provide low-loss switching characteristics, making it an ideal choice for improving equipment operating efficiency and stability.
With its low on-resistance and high current capability, this MOSFET is widely used in power management, DC-DC conversion, automotive electronics and industrial control.
1. **Power management system**: IPB80N04S3-03-VB is particularly suitable for high-current power management systems, providing efficient switching performance and low conduction losses, improving the energy efficiency of the entire power management system. Its high current handling capability enables it to be used in high-power power management and high-current applications such as server power supplies, computer power supplies, etc.
2. **Motor control**: Due to its high current and low conduction losses, IPB80N04S3-03-VB is suitable for motor drive and control circuits, especially in industrial and automotive motor control. It can effectively manage the start and stop of the motor while reducing energy loss and improving the overall efficiency and life of the motor system.
3. **DC-DC converter**: In DC-DC converter applications, IPB80N04S3-03-VB can be used as an efficient switching element to support voltage conversion and power management. Its low on-resistance and high-efficiency switching characteristics enable it to improve converter efficiency and reduce power loss, making it suitable for a variety of voltage conversion applications.
4. **Electric Vehicle (EV) Battery Management**: This MOSFET can be used in the battery management system (BMS) of electric vehicles to play a switching control role during the battery charging and discharging process. Its high current capability and low conduction loss help improve the energy efficiency and battery life of electric vehicles while ensuring the stability and safety of the system.
5. **Industrial Automation and Drive Modules**: The IPB80N04S3-03-VB is suitable for high-efficiency switching applications in the field of industrial automation, such as automatic control and drive modules for industrial equipment. It can withstand high current loads and provide low-loss switching characteristics, making it an ideal choice for improving equipment operating efficiency and stability.
With its low on-resistance and high current capability, this MOSFET is widely used in power management, DC-DC conversion, automotive electronics and industrial control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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