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IPB80N04S2L-03-VB Product details
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1. Product Introduction
**IPB80N04S2L-03-VB** is a high-performance single N-channel MOSFET in TO263 package with a maximum drain-source voltage (VDS) of 40V, a gate-source voltage (VGS) range of ±20V, and a turn-on voltage (Vth) of 3V. This product uses advanced Trench technology, with an on-resistance (RDS(ON)) of 2.5mΩ at VGS=4.5V and 2mΩ at VGS=10V, capable of carrying a drain current (ID) of up to 150A. With its high efficiency and low loss, this MOSFET is suitable for applications requiring low on-resistance and high current handling capability.
**IPB80N04S2L-03-VB** is a high-performance single N-channel MOSFET in TO263 package with a maximum drain-source voltage (VDS) of 40V, a gate-source voltage (VGS) range of ±20V, and a turn-on voltage (Vth) of 3V. This product uses advanced Trench technology, with an on-resistance (RDS(ON)) of 2.5mΩ at VGS=4.5V and 2mΩ at VGS=10V, capable of carrying a drain current (ID) of up to 150A. With its high efficiency and low loss, this MOSFET is suitable for applications requiring low on-resistance and high current handling capability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Model**: IPB80N04S2L-03-VB
- **Package**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 175°C
- **Power handling capability**: Excellent low conduction loss, suitable for high current applications
- **Switching speed**: Suitable for high-speed switching applications
- **Model**: IPB80N04S2L-03-VB
- **Package**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 175°C
- **Power handling capability**: Excellent low conduction loss, suitable for high current applications
- **Switching speed**: Suitable for high-speed switching applications
Domain and module applications：
3. Application fields and modules
**IPB80N04S2L-03-VB** MOSFET performs well in multiple industry applications with its low on-resistance and high current capability:
- **Power management**: This MOSFET is particularly suitable for DC-DC converters and voltage regulator modules, and can provide efficient power conversion and management in low voltage and high current environments. This is especially important for power systems in data centers and power management of portable devices.
- **Automotive electronics**: In the battery management system and electric drive system of electric vehicles (EVs), IPB80N04S2L-03-VB can help achieve efficient power conversion and high current control, improve system performance and reduce power consumption.
- **Industrial equipment**: In automation and heavy industrial applications, especially motor control systems and power switch modules, this MOSFET provides high current handling capability and reliable switching performance, which helps improve the operating efficiency and reliability of equipment.
- **Consumer Electronics**: In consumer electronic devices that require efficient current handling, such as high-performance computers, home appliances, and audio equipment, this MOSFET can be used in power conversion, load switching, and power control modules to improve product performance and energy saving.
- **Solar Inverters**: The low on-resistance and high current handling capabilities of this MOSFET enable it to effectively improve power conversion efficiency in inverter modules in solar systems and support the optimization of renewable energy systems.
**IPB80N04S2L-03-VB** is suitable for power management, automotive electronics, industrial equipment, consumer electronics, and solar inverters, and can meet the needs of high current and low on-resistance applications.
**IPB80N04S2L-03-VB** MOSFET performs well in multiple industry applications with its low on-resistance and high current capability:
- **Power management**: This MOSFET is particularly suitable for DC-DC converters and voltage regulator modules, and can provide efficient power conversion and management in low voltage and high current environments. This is especially important for power systems in data centers and power management of portable devices.
- **Automotive electronics**: In the battery management system and electric drive system of electric vehicles (EVs), IPB80N04S2L-03-VB can help achieve efficient power conversion and high current control, improve system performance and reduce power consumption.
- **Industrial equipment**: In automation and heavy industrial applications, especially motor control systems and power switch modules, this MOSFET provides high current handling capability and reliable switching performance, which helps improve the operating efficiency and reliability of equipment.
- **Consumer Electronics**: In consumer electronic devices that require efficient current handling, such as high-performance computers, home appliances, and audio equipment, this MOSFET can be used in power conversion, load switching, and power control modules to improve product performance and energy saving.
- **Solar Inverters**: The low on-resistance and high current handling capabilities of this MOSFET enable it to effectively improve power conversion efficiency in inverter modules in solar systems and support the optimization of renewable energy systems.
**IPB80N04S2L-03-VB** is suitable for power management, automotive electronics, industrial equipment, consumer electronics, and solar inverters, and can meet the needs of high current and low on-resistance applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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