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IPB80N04S2-H4-VB Product details
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1. IPB80N04S2-H4-VB MOSFET Product Introduction
IPB80N04S2-H4-VB is a high-performance N-channel power MOSFET packaged in TO-263, suitable for use in applications requiring high current handling capability and low conduction losses. With a maximum drain-source voltage (VDS) of 40V and a maximum continuous drain current (ID) of 100A, the device is capable of handling high current loads and has an extremely low on-resistance (RDS(ON)) of 6mΩ (@VGS=4.5V) and 5mΩ (@VGS=10V), respectively, ensuring low power operation. Its gate threshold voltage (Vth) is 2.5V, ensuring fast switching and stable operation. This model uses advanced Trench technology, with high efficiency and low losses, and is suitable for a variety of power management applications.
IPB80N04S2-H4-VB is a high-performance N-channel power MOSFET packaged in TO-263, suitable for use in applications requiring high current handling capability and low conduction losses. With a maximum drain-source voltage (VDS) of 40V and a maximum continuous drain current (ID) of 100A, the device is capable of handling high current loads and has an extremely low on-resistance (RDS(ON)) of 6mΩ (@VGS=4.5V) and 5mΩ (@VGS=10V), respectively, ensuring low power operation. Its gate threshold voltage (Vth) is 2.5V, ensuring fast switching and stable operation. This model uses advanced Trench technology, with high efficiency and low losses, and is suitable for a variety of power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description of IPB80N04S2-H4-VB MOSFET
- **Package type**: TO-263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 100A
- **Technology type**: Trench technology
- **Package type**: TO-263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 100A
- **Technology type**: Trench technology
Domain and module applications：
III. Application fields and module examples of IPB80N04S2-H4-VB
1. **Automotive electronics**: IPB80N04S2-H4-VB is widely used in power management systems in automotive electronics, such as power windows, seat adjusters and power door locks. Its high current carrying capacity ensures stable operation of high-power devices, while its low on-resistance reduces power losses and improves the overall efficiency and durability of automotive electronic systems.
2. **Power management and converters**: In DC-DC converters and power modules, IPB80N04S2-H4-VB performs well, especially in areas such as server power supplies and industrial power supplies. Its low on-resistance and high current handling capability make it particularly suitable for high-efficiency power management applications, ensuring low losses and high efficiency during power conversion.
3. **Industrial control systems**: This MOSFET is suitable for high-current switching and motor control applications in industrial control systems. Its high durability and low power loss characteristics make it an ideal choice for high-load applications such as motor drive and solenoid valve control, and it can provide efficient and stable power management in industrial environments.
4. **Consumer Electronic Devices**: In high-performance consumer electronics products such as high-efficiency battery management systems, LED drivers and power regulators, IPB80N04S2-H4-VB provides a low-loss, high-reliability current control solution. Its fast switching performance is suitable for applications that require frequent switching, improving the energy efficiency of the equipment.
In short, IPB80N04S2-H4-VB MOSFET is widely used in automotive electronics, power management, industrial control and high-performance consumer electronics with its excellent current handling capability, low conduction loss and high-efficiency switching performance, providing stable and reliable power solutions for various application scenarios.
1. **Automotive electronics**: IPB80N04S2-H4-VB is widely used in power management systems in automotive electronics, such as power windows, seat adjusters and power door locks. Its high current carrying capacity ensures stable operation of high-power devices, while its low on-resistance reduces power losses and improves the overall efficiency and durability of automotive electronic systems.
2. **Power management and converters**: In DC-DC converters and power modules, IPB80N04S2-H4-VB performs well, especially in areas such as server power supplies and industrial power supplies. Its low on-resistance and high current handling capability make it particularly suitable for high-efficiency power management applications, ensuring low losses and high efficiency during power conversion.
3. **Industrial control systems**: This MOSFET is suitable for high-current switching and motor control applications in industrial control systems. Its high durability and low power loss characteristics make it an ideal choice for high-load applications such as motor drive and solenoid valve control, and it can provide efficient and stable power management in industrial environments.
4. **Consumer Electronic Devices**: In high-performance consumer electronics products such as high-efficiency battery management systems, LED drivers and power regulators, IPB80N04S2-H4-VB provides a low-loss, high-reliability current control solution. Its fast switching performance is suitable for applications that require frequent switching, improving the energy efficiency of the equipment.
In short, IPB80N04S2-H4-VB MOSFET is widely used in automotive electronics, power management, industrial control and high-performance consumer electronics with its excellent current handling capability, low conduction loss and high-efficiency switching performance, providing stable and reliable power solutions for various application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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