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IPB80N04S2-04-VB Product details
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IPB80N04S2-04-VB Product Introduction
IPB80N04S2-04-VB is a single N-channel power MOSFET in TO263 package, based on advanced Trench technology, designed for efficient current handling applications. Its maximum drain-source voltage (VDS) is 40V, the gate-source voltage (VGS) is ±20V, and the threshold voltage is 3V. The device has an extremely low on-resistance (RDS(ON)), with an on-resistance of only 2mΩ at VGS=10V, allowing a drain current of up to 150A. This MOSFET is particularly suitable for high power density and low loss application scenarios, and can greatly improve the overall efficiency of the system.
IPB80N04S2-04-VB is a single N-channel power MOSFET in TO263 package, based on advanced Trench technology, designed for efficient current handling applications. Its maximum drain-source voltage (VDS) is 40V, the gate-source voltage (VGS) is ±20V, and the threshold voltage is 3V. The device has an extremely low on-resistance (RDS(ON)), with an on-resistance of only 2mΩ at VGS=10V, allowing a drain current of up to 150A. This MOSFET is particularly suitable for high power density and low loss application scenarios, and can greatly improve the overall efficiency of the system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IPB80N04S2-04-VB Parameter Description
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ@VGS=4.5V
- 2mΩ@VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ@VGS=4.5V
- 2mΩ@VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
Application fields and modules of IPB80N04S2-04-VB
1. **Automotive electronics**: IPB80N04S2-04-VB is suitable for automotive electronic systems, especially in modules such as power management and motor drive. Its low on-resistance can effectively reduce heat generation and power loss, and improve the efficiency and reliability of automotive electronic systems.
2. **Power management**: This MOSFET is very suitable for use in efficient power management modules such as DC-DC converters and synchronous rectification applications. Its high current handling capability and low on-resistance enable it to operate effectively in high power density environments, reducing power consumption and improving efficiency.
3. **Industrial equipment**: In industrial applications, IPB80N04S2-04-VB can be used in high current devices such as motor drives and industrial power control. Its high reliability and low loss characteristics make it suitable for continuous operation in high load and high frequency environments.
4. **Data Center & Server**: Due to its efficient current handling capability and extremely low conduction losses, this MOSFET can be used in power modules and power distribution systems in data center and server applications, helping to reduce energy consumption and improve overall system efficiency.
5. **Consumer Electronics**: The IPB80N04S2-04-VB is also suitable for high-power consumer electronic devices, such as power management modules in game consoles and high-performance computing devices, where its high efficiency and low heat generation can provide longer operating life and higher performance.
1. **Automotive electronics**: IPB80N04S2-04-VB is suitable for automotive electronic systems, especially in modules such as power management and motor drive. Its low on-resistance can effectively reduce heat generation and power loss, and improve the efficiency and reliability of automotive electronic systems.
2. **Power management**: This MOSFET is very suitable for use in efficient power management modules such as DC-DC converters and synchronous rectification applications. Its high current handling capability and low on-resistance enable it to operate effectively in high power density environments, reducing power consumption and improving efficiency.
3. **Industrial equipment**: In industrial applications, IPB80N04S2-04-VB can be used in high current devices such as motor drives and industrial power control. Its high reliability and low loss characteristics make it suitable for continuous operation in high load and high frequency environments.
4. **Data Center & Server**: Due to its efficient current handling capability and extremely low conduction losses, this MOSFET can be used in power modules and power distribution systems in data center and server applications, helping to reduce energy consumption and improve overall system efficiency.
5. **Consumer Electronics**: The IPB80N04S2-04-VB is also suitable for high-power consumer electronic devices, such as power management modules in game consoles and high-performance computing devices, where its high efficiency and low heat generation can provide longer operating life and higher performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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