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IPB80N03S4L-04-VB Product details
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IPB80N03S4L-04-VB is a single N-channel MOSFET in a TO263 package, designed for applications with high-efficiency current control. It has a drain-source voltage (VDS) of 30V, a maximum gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.7V. Using advanced Trench technology, this MOSFET provides extremely low on-resistance (RDS(ON)), 3.2mΩ at VGS=4.5V, 2.3mΩ at VGS=10V, and a maximum drain current (ID) of up to 150A. This low on-resistance and high current handling capability make it an ideal choice for efficient power conversion and management.
2. IPB80N03S4L-04-VB
IPB80N03S4L-04-VB is a single N-channel MOSFET in a TO263 package, designed for applications with high-efficiency current control. It has a drain-source voltage (VDS) of 30V, a maximum gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.7V. Using advanced Trench technology, this MOSFET provides extremely low on-resistance (RDS(ON)), 3.2mΩ at VGS=4.5V, 2.3mΩ at VGS=10V, and a maximum drain current (ID) of up to 150A. This low on-resistance and high current handling capability make it an ideal choice for efficient power conversion and management.
2. IPB80N03S4L-04-VB
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 2.3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
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Package type: TO263
Configuration: Single N-channel
Maximum drain-source voltage (VDS): 30V
Maximum gate-source voltage (VGS): ±20V
Threshold voltage (Vth): 1.7V
On-resistance (RDS(ON)):
3.2mΩ @ VGS=4.5V
2.3mΩ @ VGS=10V
Maximum drain current (ID): 150A
Technology type: Trench
III.
Package type: TO263
Configuration: Single N-channel
Maximum drain-source voltage (VDS): 30V
Maximum gate-source voltage (VGS): ±20V
Threshold voltage (Vth): 1.7V
On-resistance (RDS(ON)):
3.2mΩ @ VGS=4.5V
2.3mΩ @ VGS=10V
Maximum drain current (ID): 150A
Technology type: Trench
III.
Domain and module applications：
Automotive electronics: IPB80N03S4L-04-VB is widely used in automotive electronics, especially for power management modules and motor drives. Its high current handling capability and low on-resistance enable it to work efficiently under high power loads, and is suitable for electric power steering systems (EPS), electric seat adjustment, electronic oil pumps and electric window controls.
Battery Management System (BMS): Due to its high current carrying capacity and low on-resistance, this MOSFET is often used in battery management systems. During the battery charging and discharging process, it can effectively reduce losses and improve the overall efficiency of the system. Especially in electric vehicles and energy storage systems, IPB80N03S4L-04-VB can ensure efficient management and long life of the battery.
Power Management and DC-DC Converters: The low on-resistance of this MOSFET makes it very suitable for use in high-efficiency DC-DC converters. In power management applications, it can improve overall energy efficiency by reducing switching losses. It has important applications in server power supplies, computer power supplies and industrial power systems.
Home appliances and consumer electronics: In home appliances, the IPB80N03S4L-04-VB can be used in a variety of applications that require high-power current switching, such as air conditioners, washing machines, and microwave ovens. Due to its high efficiency and high power handling capabilities, it can optimize the energy efficiency of home appliances, reduce power consumption, and improve the reliability of equipment.
In general, the IPB80N03S4L-04-VB performs well in the fields of automotive electronics, battery management, power management, and consumer electronics with its excellent current handling capabilities and low on-resistance, and is widely used in high-power devices that require efficient current control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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