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IPB80N03S4L-03-VB Product details
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Product Introduction
**IPB80N03S4L-03-VB** is a high-performance N-Channel MOSFET in a TO263 package and manufactured based on Trench technology. Designed to handle high current and high-efficiency switching applications, this MOSFET can withstand drain-source voltages up to 30V and has a very low on-resistance of 2.3mΩ at VGS=10V. The maximum continuous current is 150A, making it excel in applications requiring high current and low conduction losses. **IPB80N03S4L-03-VB** is ideal for use in electronic devices and power modules that require high switching efficiency and high current handling.
**IPB80N03S4L-03-VB** is a high-performance N-Channel MOSFET in a TO263 package and manufactured based on Trench technology. Designed to handle high current and high-efficiency switching applications, this MOSFET can withstand drain-source voltages up to 30V and has a very low on-resistance of 2.3mΩ at VGS=10V. The maximum continuous current is 150A, making it excel in applications requiring high current and low conduction losses. **IPB80N03S4L-03-VB** is ideal for use in electronic devices and power modules that require high switching efficiency and high current handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 2.3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ @ VGS=4.5V
- 2.3mΩ @ VGS=10V
- **Maximum continuous current (ID)**: 150A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ @ VGS=4.5V
- 2.3mΩ @ VGS=10V
- **Maximum continuous current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **High-efficiency power management**:
**IPB80N03S4L-03-VB**'s low on-resistance and high current handling capability make it ideal for use in high-efficiency power management systems. It can provide efficient power conversion in switching power supplies, especially suitable for high-current DC-DC converters and power switch modules, improving system efficiency and reducing energy losses.
2. **Motor drive**:
In motor drive applications, such as electric vehicles or industrial motor control systems, **IPB80N03S4L-03-VB** can handle high currents and perform efficient switching to ensure smooth operation of the motor. Its low on-resistance helps reduce power losses and improve the overall efficiency and reliability of the motor.
3. **Power inverter**:
This MOSFET is suitable for power inverter systems, such as solar inverters and wind power generation systems. Due to its high current capability and low on-resistance, **IPB80N03S4L-03-VB** can efficiently handle high currents in inverters, ensuring efficient and stable power conversion.
4. **High Power Switch**:
**IPB80N03S4L-03-VB** is also suitable for high power switching applications such as power switching and load switching. Its low on-resistance and high current handling capability make it an excellent performer in high power switch modules, capable of handling high loads and reducing switching losses, improving the overall performance and safety of the system.
1. **High-efficiency power management**:
**IPB80N03S4L-03-VB**'s low on-resistance and high current handling capability make it ideal for use in high-efficiency power management systems. It can provide efficient power conversion in switching power supplies, especially suitable for high-current DC-DC converters and power switch modules, improving system efficiency and reducing energy losses.
2. **Motor drive**:
In motor drive applications, such as electric vehicles or industrial motor control systems, **IPB80N03S4L-03-VB** can handle high currents and perform efficient switching to ensure smooth operation of the motor. Its low on-resistance helps reduce power losses and improve the overall efficiency and reliability of the motor.
3. **Power inverter**:
This MOSFET is suitable for power inverter systems, such as solar inverters and wind power generation systems. Due to its high current capability and low on-resistance, **IPB80N03S4L-03-VB** can efficiently handle high currents in inverters, ensuring efficient and stable power conversion.
4. **High Power Switch**:
**IPB80N03S4L-03-VB** is also suitable for high power switching applications such as power switching and load switching. Its low on-resistance and high current handling capability make it an excellent performer in high power switch modules, capable of handling high loads and reducing switching losses, improving the overall performance and safety of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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