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IPB80N03S4L-02-VB Product details
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IPB80N03S4L-02-VB is a high-performance N-channel MOSFET in TO263 package. The MOSFET supports a maximum drain-source voltage (VDS) of 30V and a drain current (ID) of up to 150A. Its on-resistance (RDS(ON)) is 3.2mΩ at VGS=4.5V and 2.3mΩ at VGS=10V. Using Trench technology, IPB80N03S4L-02-VB provides low switching loss and high efficiency, suitable for high current and high frequency applications.
**IPB80N03S4L-02-VB
IPB80N03S4L-02-VB is a high-performance N-channel MOSFET in TO263 package. The MOSFET supports a maximum drain-source voltage (VDS) of 30V and a drain current (ID) of up to 150A. Its on-resistance (RDS(ON)) is 3.2mΩ at VGS=4.5V and 2.3mΩ at VGS=10V. Using Trench technology, IPB80N03S4L-02-VB provides low switching loss and high efficiency, suitable for high current and high frequency applications.
**IPB80N03S4L-02-VB
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 2.3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
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- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage(VDS)**: 30V
- **Gate-source voltage(VGS)**: ±20V
- **Threshold voltage(Vth)**: 1.7V
- **On-resistance(RDS(ON))**: 3.2mΩ @ VGS=4.5V
- **On-resistance(RDS(ON))**: 2.3mΩ @ VGS=10V
- **Drain current(ID)**: 150A
- **Technology**: Trench
**
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage(VDS)**: 30V
- **Gate-source voltage(VGS)**: ±20V
- **Threshold voltage(Vth)**: 1.7V
- **On-resistance(RDS(ON))**: 3.2mΩ @ VGS=4.5V
- **On-resistance(RDS(ON))**: 2.3mΩ @ VGS=10V
- **Drain current(ID)**: 150A
- **Technology**: Trench
**
Domain and module applications：
1. **Power Management and DC-DC Converters**
IPB80N03S4L-02-VB is very useful in power management and DC-DC converters, especially in scenarios where high current needs to be handled. Its low on-resistance and high current capability enable it to efficiently manage the power conversion process, improving the efficiency and stability of the overall system.
2. **Motor Drive and Control**
This MOSFET is also suitable for motor drive systems, such as DC motor and stepper motor drives. Its high current capability and low switching loss characteristics enable it to efficiently control the start-up and operation of the motor, thereby improving the performance and reliability of the motor system.
3. **High-efficiency Switching Power Supply**
In high-efficiency switching power supply modules, IPB80N03S4L-02-VB is able to handle high current loads and provide low on-resistance, reducing power loss and heat generation. This makes this MOSFET suitable for switching power supplies in high-power applications, improving the energy efficiency and reliability of the system.
4. **Power Management and Battery Management System**
In power management and battery management system, the low on-resistance and high current capability of IPB80N03S4L-02-VB make it an ideal choice. It can efficiently manage the battery charging and discharging process to ensure the safety and performance of the battery system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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