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IPB77N06S3-09-VB Product details
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IPB77N06S3-09-VB Product Introduction
IPB77N06S3-09-VB is a high-performance single N-channel MOSFET in TO263 package. This MOSFET adopts advanced Trench technology and is designed for high current and high switching frequency applications. It can withstand drain-source voltage up to 60V and has a maximum drain current capability of 150A. Its low on-resistance (4mΩ) ensures high efficiency and low energy loss under high current operating conditions.
IPB77N06S3-09-VB is a high-performance single N-channel MOSFET in TO263 package. This MOSFET adopts advanced Trench technology and is designed for high current and high switching frequency applications. It can withstand drain-source voltage up to 60V and has a maximum drain current capability of 150A. Its low on-resistance (4mΩ) ensures high efficiency and low energy loss under high current operating conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IPB77N06S3-09-VB Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate drive voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench technology
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate drive voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Power management system**: The IPB77N06S3-09-VB is suitable for power management systems such as DC-DC converters and power distribution modules. Its low on-resistance and high drain current capability enable it to effectively reduce power consumption and heat when handling high current power switches, improving the overall efficiency of the system.
2. **Electric vehicle (EV) and hybrid electric vehicle (HEV) drive system**: In the drive system of electric vehicles and hybrid electric vehicles, this MOSFET is able to handle high current and high power requirements. Its excellent switching characteristics and low on-resistance help improve the performance and reliability of motor control systems, especially in applications with high loads and high switching frequencies.
3. **Industrial motor control**: In industrial motor control systems, the IPB77N06S3-09-VB is able to handle high current startup and operating conditions. Its high current carrying capacity and low on-resistance make it an ideal choice for high power motor drive systems, ensuring efficient and reliable motor control.
4. **High-frequency switching power supply**: This MOSFET is also suitable for high-frequency switching power supply applications, such as high-frequency switching and high-efficiency power conversion. Its low on-resistance and good switching characteristics can significantly reduce switching losses and improve the efficiency and performance of the switching power supply.
In short, IPB77N06S3-09-VB is a MOSFET that performs well in high-current and high-frequency applications. Its low on-resistance and high drain current capability make it widely used in power management, electric vehicle drive, industrial motor control, and high-frequency switching power supply.
1. **Power management system**: The IPB77N06S3-09-VB is suitable for power management systems such as DC-DC converters and power distribution modules. Its low on-resistance and high drain current capability enable it to effectively reduce power consumption and heat when handling high current power switches, improving the overall efficiency of the system.
2. **Electric vehicle (EV) and hybrid electric vehicle (HEV) drive system**: In the drive system of electric vehicles and hybrid electric vehicles, this MOSFET is able to handle high current and high power requirements. Its excellent switching characteristics and low on-resistance help improve the performance and reliability of motor control systems, especially in applications with high loads and high switching frequencies.
3. **Industrial motor control**: In industrial motor control systems, the IPB77N06S3-09-VB is able to handle high current startup and operating conditions. Its high current carrying capacity and low on-resistance make it an ideal choice for high power motor drive systems, ensuring efficient and reliable motor control.
4. **High-frequency switching power supply**: This MOSFET is also suitable for high-frequency switching power supply applications, such as high-frequency switching and high-efficiency power conversion. Its low on-resistance and good switching characteristics can significantly reduce switching losses and improve the efficiency and performance of the switching power supply.
In short, IPB77N06S3-09-VB is a MOSFET that performs well in high-current and high-frequency applications. Its low on-resistance and high drain current capability make it widely used in power management, electric vehicle drive, industrial motor control, and high-frequency switching power supply.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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