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IPB77N06S2-12-VB Product details
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Product Introduction
IPB77N06S2-12-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high current and medium voltage applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V and the maximum on-current (ID) is 150A. Its on-resistance is 4mΩ at a gate drive voltage of 10V, providing excellent switching performance and low power consumption. Utilizing advanced Trench technology, this MOSFET is suitable for applications requiring high efficiency and high current handling capabilities.
IPB77N06S2-12-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high current and medium voltage applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V and the maximum on-current (ID) is 150A. Its on-resistance is 4mΩ at a gate drive voltage of 10V, providing excellent switching performance and low power consumption. Utilizing advanced Trench technology, this MOSFET is suitable for applications requiring high efficiency and high current handling capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- @ VGS = 10V: 4mΩ
- **Maximum on-current (ID)**: 150A
- **Technology type**: Trench
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- @ VGS = 10V: 4mΩ
- **Maximum on-current (ID)**: 150A
- **Technology type**: Trench
Domain and module applications：
Applications and module examples: The high current capability and low on-resistance of the IPB77N06S2-12-VB MOSFET enable it to excel in multiple areas. First, in **DC-DC converters**, this MOSFET can efficiently handle high current loads, optimize power conversion efficiency, and reduce energy losses. Second, in **switching power supplies (SMPS)**, it can effectively control current and improve the power density and stability of the system. This MOSFET also has important applications in **electric vehicle battery management systems (BMS)**, which can manage the high current load of the battery and ensure safe and efficient operation of the battery. In addition, in **motor drive systems**, the IPB77N06S2-12-VB can provide reliable high-current switching to support efficient operation of the motor. Due to its excellent performance, this MOSFET is also suitable for **high-power switch modules** and **industrial power control systems**, providing stable current management and efficient power conversion for these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
