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IPB70P04P4L-08-VB Product details
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Product Introduction:
IPB70P04P4L-08-VB is a high-performance P-channel MOSFET in TO263 package, designed for high current and high-efficiency applications. The drain-source voltage (VDS) of this MOSFET can reach -40V, and the drain current (ID) can reach up to -110A. Its on-resistance (RDS(ON)) is 4.1mΩ at VGS of 10V, showing very low conduction loss, suitable for occasions requiring high current and high efficiency. IPB70P04P4L-08-VB uses Trench technology, providing excellent current handling capability and low conduction loss, making it very suitable for power management and switch control applications.
IPB70P04P4L-08-VB is a high-performance P-channel MOSFET in TO263 package, designed for high current and high-efficiency applications. The drain-source voltage (VDS) of this MOSFET can reach -40V, and the drain current (ID) can reach up to -110A. Its on-resistance (RDS(ON)) is 4.1mΩ at VGS of 10V, showing very low conduction loss, suitable for occasions requiring high current and high efficiency. IPB70P04P4L-08-VB uses Trench technology, providing excellent current handling capability and low conduction loss, making it very suitable for power management and switch control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | 4.1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description:
- **Package type**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 4.1mΩ @ VGS=10V
- 8.28mΩ @ VGS=4.5V
- **Drain current (ID)**: -110A
- **Technology**: Trench technology, providing low conduction loss and high current handling capability
- **Thermal resistance (Rth(ja))**: Typical value is about 62 K/W
- **Junction temperature range**: -55°C to +175°C
- **Package type**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 4.1mΩ @ VGS=10V
- 8.28mΩ @ VGS=4.5V
- **Drain current (ID)**: -110A
- **Technology**: Trench technology, providing low conduction loss and high current handling capability
- **Thermal resistance (Rth(ja))**: Typical value is about 62 K/W
- **Junction temperature range**: -55°C to +175°C
Domain and module applications：
Applicable fields and module applications:
1. **High current power management**: IPB70P04P4L-08-VB performs well in high current power management applications, and is particularly suitable for high current power switches and power management modules. Its low on-resistance and high current handling capability enable it to effectively manage and control power and reduce system energy loss.
2. **Motor drive**: In motor drive applications, this MOSFET can be used as an efficient switching element to provide a stable current supply. Its high current capability and low conduction loss ensure the efficient operation and reliability of the motor drive system.
3. **DC-DC converter**: In DC-DC converters, IPB70P04P4L-08-VB can be used for high current switching, supporting efficient voltage conversion and power management. Its low on-resistance reduces energy loss and improves conversion efficiency.
4. **Power amplifier**: In power amplifiers, this MOSFET is suitable for high current switch control. Its low on-resistance and high current capability enable it to handle high-power signals and optimize the performance of the amplifier.
5. **Battery Management System (BMS)**: IPB70P04P4L-08-VB can be used for battery switching and protection in the battery management system. Its low conduction loss and high current handling capability help improve the efficiency and stability of the battery management system and ensure the safe operation of the system.
The low on-resistance and high current handling capability of IPB70P04P4L-08-VB enable it to perform well in high-current applications and is suitable for use in power management, motor drive, DC-DC converters and other fields.
1. **High current power management**: IPB70P04P4L-08-VB performs well in high current power management applications, and is particularly suitable for high current power switches and power management modules. Its low on-resistance and high current handling capability enable it to effectively manage and control power and reduce system energy loss.
2. **Motor drive**: In motor drive applications, this MOSFET can be used as an efficient switching element to provide a stable current supply. Its high current capability and low conduction loss ensure the efficient operation and reliability of the motor drive system.
3. **DC-DC converter**: In DC-DC converters, IPB70P04P4L-08-VB can be used for high current switching, supporting efficient voltage conversion and power management. Its low on-resistance reduces energy loss and improves conversion efficiency.
4. **Power amplifier**: In power amplifiers, this MOSFET is suitable for high current switch control. Its low on-resistance and high current capability enable it to handle high-power signals and optimize the performance of the amplifier.
5. **Battery Management System (BMS)**: IPB70P04P4L-08-VB can be used for battery switching and protection in the battery management system. Its low conduction loss and high current handling capability help improve the efficiency and stability of the battery management system and ensure the safe operation of the system.
The low on-resistance and high current handling capability of IPB70P04P4L-08-VB enable it to perform well in high-current applications and is suitable for use in power management, motor drive, DC-DC converters and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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