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IPB70P04P4-09-VB Product details
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1. Product Introduction
**IPB70P04P4-09-VB** is a high-performance single P-channel MOSFET in TO263 package. This MOSFET has a drain-source voltage (VDS) of -40V, making it suitable for medium negative voltage applications. Its gate-source voltage (VGS) range is ±20V, and the turn-on voltage (Vth) is -2.5V. Using Trench technology, it has an on-resistance (RDS(ON)@4.5V) of 8.28mΩ and an on-resistance (RDS(ON)@10V) of 4.1mΩ, and can carry a continuous drain current (ID) of up to -110A. This MOSFET is designed for high current and low on-resistance switching applications, providing excellent current control and high efficiency.
**IPB70P04P4-09-VB** is a high-performance single P-channel MOSFET in TO263 package. This MOSFET has a drain-source voltage (VDS) of -40V, making it suitable for medium negative voltage applications. Its gate-source voltage (VGS) range is ±20V, and the turn-on voltage (Vth) is -2.5V. Using Trench technology, it has an on-resistance (RDS(ON)@4.5V) of 8.28mΩ and an on-resistance (RDS(ON)@10V) of 4.1mΩ, and can carry a continuous drain current (ID) of up to -110A. This MOSFET is designed for high current and low on-resistance switching applications, providing excellent current control and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | 4.1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
2. Detailed parameter description
- **Model**: IPB70P04P4-09-VB
- **Package**: TO263
- **Configuration**: Single P-channel MOSFET
- **Drain-source voltage (VDS)**: -40V
- **Gate-source voltage (VGS)**: ±20V
- **Throwing voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 8.28mΩ @ VGS=4.5V
- 4.1mΩ @ VGS=10V
- **Continuous drain current (ID)**: -110A
- **Technology**: Trench
- **Power loss**: Low on-resistance reduces power consumption
- **Switching characteristics**: High switching speed, suitable for high frequency applications
- **Operating temperature range**: -55°C to 175°C
- **Model**: IPB70P04P4-09-VB
- **Package**: TO263
- **Configuration**: Single P-channel MOSFET
- **Drain-source voltage (VDS)**: -40V
- **Gate-source voltage (VGS)**: ±20V
- **Throwing voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 8.28mΩ @ VGS=4.5V
- 4.1mΩ @ VGS=10V
- **Continuous drain current (ID)**: -110A
- **Technology**: Trench
- **Power loss**: Low on-resistance reduces power consumption
- **Switching characteristics**: High switching speed, suitable for high frequency applications
- **Operating temperature range**: -55°C to 175°C
Domain and module applications：
3. Applicable fields and modules
**IPB70P04P4-09-VB** MOSFET's high current and low on-resistance make it outstanding in the following fields and modules:
- **Power management**: In power management systems that require high current and low power consumption, such as high-efficiency DC-DC converters and power regulators, this MOSFET provides excellent current control capability and low power consumption characteristics, which can effectively manage power flow.
- **Load switch**: In high-current load switching applications, such as battery management systems and motor drive circuits, the high current carrying capacity and low on-resistance of IPB70P04P4-09-VB can ensure stable load control and effective power switching.
- **Power converter**: In high-power converters and power modules, this MOSFET can perform switching operations efficiently, especially in situations where high current and low power consumption are required, such as high-power power conversion and high-efficiency power converters.
- **Automotive Electronics**: In automotive electronic systems, such as power management and load control systems for electric vehicles, this MOSFET can provide reliable high-current switching capabilities to meet the high requirements of automotive systems.
- **Industrial Equipment**: In industrial equipment and automation systems, the IPB70P04P4-09-VB MOSFET can be used in motor control, power switching and power management applications, providing stable and efficient performance.
- **Home Appliance Applications**: In home appliance products, such as high-power motor drives and power management, the high current capability and low power consumption characteristics of this MOSFET help improve the efficiency and reliability of the equipment.
**IPB70P04P4-09-VB** MOSFET is suitable for power management, load switching, power converters, automotive electronics, industrial equipment and home appliance applications due to its high current capability and low on-resistance. It provides efficient current control and switching performance to meet the needs of high current and low power consumption.
**IPB70P04P4-09-VB** MOSFET's high current and low on-resistance make it outstanding in the following fields and modules:
- **Power management**: In power management systems that require high current and low power consumption, such as high-efficiency DC-DC converters and power regulators, this MOSFET provides excellent current control capability and low power consumption characteristics, which can effectively manage power flow.
- **Load switch**: In high-current load switching applications, such as battery management systems and motor drive circuits, the high current carrying capacity and low on-resistance of IPB70P04P4-09-VB can ensure stable load control and effective power switching.
- **Power converter**: In high-power converters and power modules, this MOSFET can perform switching operations efficiently, especially in situations where high current and low power consumption are required, such as high-power power conversion and high-efficiency power converters.
- **Automotive Electronics**: In automotive electronic systems, such as power management and load control systems for electric vehicles, this MOSFET can provide reliable high-current switching capabilities to meet the high requirements of automotive systems.
- **Industrial Equipment**: In industrial equipment and automation systems, the IPB70P04P4-09-VB MOSFET can be used in motor control, power switching and power management applications, providing stable and efficient performance.
- **Home Appliance Applications**: In home appliance products, such as high-power motor drives and power management, the high current capability and low power consumption characteristics of this MOSFET help improve the efficiency and reliability of the equipment.
**IPB70P04P4-09-VB** MOSFET is suitable for power management, load switching, power converters, automotive electronics, industrial equipment and home appliance applications due to its high current capability and low on-resistance. It provides efficient current control and switching performance to meet the needs of high current and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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