IPB70N10SL-16-VB Product details
Product introduction:
IPB70N10SL-16-VB is a high-performance N-channel power MOSFET in a TO-263 package, designed to handle medium-to-high voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 100V, making it suitable for use in circuits that need to withstand higher voltages. Its maximum continuous drain current (ID) reaches 100A, enabling it to handle large load currents. The on-resistance (RDS(ON)) is 10mΩ at a gate voltage (VGS) of 10V, providing low power loss and high efficiency performance. The gate threshold voltage (Vth) is 2.5V, ensuring reliable switching under various operating conditions. IPB70N10SL-16-VB uses trench technology to improve switching efficiency and reduce power consumption.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO-263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 100A
- **Technology type**: Trench technology
Domain and module applications:
1. **Power switch**: IPB70N10SL-16-VB performs well in power switch applications, especially for DC-DC converters and power management modules. Due to its low on-resistance and high current handling capability, it can efficiently control high current power supplies, reduce power losses and improve system efficiency.
2. **Motor control**: In motor drive systems, IPB70N10SL-16-VB is suitable for the control of high current motors, such as stepper motors and DC motor drives. Its high current capability and low on-resistance ensure efficient and stable motor drive, suitable for fields such as industrial automation and power tools.
3. **Inverter and power regulator**: This MOSFET can be applied to inverters and power regulation modules, especially in situations where higher voltages and currents need to be handled. Its high current carrying capacity and low on-resistance make it suitable for use in power conditioning devices such as solar inverters and wind inverters, providing stable power output and efficient energy conversion.
4. **Household appliances**: In the power management of household appliances, such as electric ovens, electric water heaters and electric fans, IPB70N10SL-16-VB can provide stable switching control. Its high current handling capability and low power consumption characteristics make it suitable for power switches and control modules of various electrical appliances, improving the performance and reliability of electrical appliances.
In summary, IPB70N10SL-16-VB MOSFET is widely used in power switches, motor control, inverters, power conditioners and household appliances due to its high current carrying capacity, low on-resistance and reliable switching performance, providing efficient and reliable power management solutions for these applications.
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