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IPB70N10S3L-12-VB Product details
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IPB70N10S3L-12-VB Product Introduction
IPB70N10S3L-12-VB is a high-performance N-type power MOSFET in TO263 package, designed for high current and high efficiency applications. Its maximum drain-source voltage (VDS) is 100V, and the gate-source voltage (VGS) can reach ±20V, which is suitable for medium and high voltage applications. The threshold voltage of this MOSFET is 2.5V. Based on Trench technology, it has excellent switching characteristics and low on-resistance. When VGS=10V, the on-resistance (RDS(ON)) is 10mΩ, supporting a maximum drain current of 100A, suitable for various application scenarios requiring high current and low loss.
IPB70N10S3L-12-VB is a high-performance N-type power MOSFET in TO263 package, designed for high current and high efficiency applications. Its maximum drain-source voltage (VDS) is 100V, and the gate-source voltage (VGS) can reach ±20V, which is suitable for medium and high voltage applications. The threshold voltage of this MOSFET is 2.5V. Based on Trench technology, it has excellent switching characteristics and low on-resistance. When VGS=10V, the on-resistance (RDS(ON)) is 10mΩ, supporting a maximum drain current of 100A, suitable for various application scenarios requiring high current and low loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IPB70N10S3L-12-VB Parameter Description
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ@VGS=4.5V
- 10mΩ@VGS=10V
- **Drain current (ID)**: 100A
- **Technology**: Trench technology
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ@VGS=4.5V
- 10mΩ@VGS=10V
- **Drain current (ID)**: 100A
- **Technology**: Trench technology
Domain and module applications：
Applications and modules of IPB70N10S3L-12-VB
1. **Power Management**: The IPB70N10S3L-12-VB is well suited for power management applications such as switching power supplies and DC-DC converters. Its low on-resistance and high current handling capability can effectively reduce power loss, improve conversion efficiency, and meet the needs of efficient power management.
2. **Electric Vehicle**: In electric vehicle applications, the high current handling capability and low on-resistance of this MOSFET make it an ideal choice for battery management systems, motor drive systems, and charging modules. It can handle large currents, improving the performance and reliability of electric vehicles.
3. **Industrial Power**: In industrial power and motor control applications, the IPB70N10S3L-12-VB is suitable for high current power switching and motor drives. Its high current carrying capacity and low switching losses make it excellent in industrial environments and suitable for power conversion and motor control modules.
4. **Consumer electronics**: In consumer electronics products, such as high-efficiency power adapters and power management modules, this MOSFET can provide stable performance and efficient power conversion, suitable for application scenarios requiring high current and low power consumption.
5. **Solar inverter**: In solar inverters and other renewable energy systems, the high current handling capability and low on-resistance of the IPB70N10S3L-12-VB enable it to effectively support efficient power conversion and improve the overall efficiency and reliability of the system.
1. **Power Management**: The IPB70N10S3L-12-VB is well suited for power management applications such as switching power supplies and DC-DC converters. Its low on-resistance and high current handling capability can effectively reduce power loss, improve conversion efficiency, and meet the needs of efficient power management.
2. **Electric Vehicle**: In electric vehicle applications, the high current handling capability and low on-resistance of this MOSFET make it an ideal choice for battery management systems, motor drive systems, and charging modules. It can handle large currents, improving the performance and reliability of electric vehicles.
3. **Industrial Power**: In industrial power and motor control applications, the IPB70N10S3L-12-VB is suitable for high current power switching and motor drives. Its high current carrying capacity and low switching losses make it excellent in industrial environments and suitable for power conversion and motor control modules.
4. **Consumer electronics**: In consumer electronics products, such as high-efficiency power adapters and power management modules, this MOSFET can provide stable performance and efficient power conversion, suitable for application scenarios requiring high current and low power consumption.
5. **Solar inverter**: In solar inverters and other renewable energy systems, the high current handling capability and low on-resistance of the IPB70N10S3L-12-VB enable it to effectively support efficient power conversion and improve the overall efficiency and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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