IPB70N10S3-12-VB Product details
Product introduction:
IPB70N10S3-12-VB is a high-performance N-channel MOSFET produced by Infineon and packaged in TO263. This MOSFET uses Trench technology and is designed for high current and high power applications. It has a maximum drain-source voltage (VDS) of 100V, a maximum gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 2.5V. Its on-resistance (RDS(ON)) is 23mΩ at VGS=4.5V, 10mΩ at VGS=10V, and a maximum drain current (ID) of 100A. This MOSFET provides excellent current handling capability and low on-resistance, and is suitable for a variety of high power and high current application scenarios.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 23mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology type**: Trench
Domain and module applications:
1. **Power management system**:
IPB70N10S3-12-VB performs well in power management systems. Its high drain-source voltage of up to 100V and low on-resistance make it ideal for high-current power switching and regulation. In DC-DC converters, this MOSFET can efficiently switch current, help convert high-voltage input into a stable low-voltage output, and ensure efficient operation of the power system.
2. **Motor drive**:
In motor drive systems, the high current handling capability and low on-resistance of IPB70N10S3-12-VB make it an ideal choice. It can be used for switching control of motors, providing a stable current flow, thereby improving the efficiency and reliability of the motor. Especially in high-power motor applications, this MOSFET is able to handle large currents and support efficient operation of motors.
3. **Industrial electrical equipment**:
In industrial electrical equipment, IPB70N10S3-12-VB is also widely used. For example, in industrial power supply and power control systems, it can efficiently handle high current loads and provide stable and reliable power switching functions. This is essential for industrial equipment that requires high current and high power support.
4. **Home appliances and energy management**:
In some home appliances and energy management systems, IPB70N10S3-12-VB can also play a role. It can be used for power switching and control of high-power home appliances, such as air conditioners, refrigerators, etc. The high current carrying capacity and low on-resistance of this MOSFET enable it to handle high power demands and improve the energy efficiency and performance of the equipment.
In general, IPB70N10S3-12-VB provides reliable solutions in the fields of power management, motor drive, industrial electrical equipment and household appliances with its high voltage and high current handling capabilities and low on-resistance, and is suitable for various high power and high current application requirements.
Technical support:
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