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IPB65R660CFD-VB Product details
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Product Introduction
**IPB65R660CFD-VB** is a high-voltage, high-power N-Channel MOSFET in TO263 package and manufactured based on SJ_Multi-EPI technology. This MOSFET can withstand a drain-source voltage of up to 700V and has a maximum continuous current capability of 10A. At VGS=10V, its on-resistance is 600mΩ. **IPB65R660CFD-VB** is designed to handle high-voltage, high-power application scenarios such as power switches, power inverters, and high-voltage power management, and can provide efficient switching performance and reliable operating stability.
**IPB65R660CFD-VB** is a high-voltage, high-power N-Channel MOSFET in TO263 package and manufactured based on SJ_Multi-EPI technology. This MOSFET can withstand a drain-source voltage of up to 700V and has a maximum continuous current capability of 10A. At VGS=10V, its on-resistance is 600mΩ. **IPB65R660CFD-VB** is designed to handle high-voltage, high-power application scenarios such as power switches, power inverters, and high-voltage power management, and can provide efficient switching performance and reliable operating stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 10A | 600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 700V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 600mΩ @ VGS=10V
- **Maximum continuous current (ID)**: 10A
- **Technology**: SJ_Multi-EPI
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 700V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 600mΩ @ VGS=10V
- **Maximum continuous current (ID)**: 10A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and modules
1. **High voltage power switch**:
The high voltage tolerance of **IPB65R660CFD-VB** makes it ideal for high voltage power switch applications. In power management systems, this MOSFET can efficiently switch 700V power, ensuring efficient power conversion and system stability. It is particularly suitable for use in high voltage DC-DC converters and power switch modules.
2. **Power inverter**:
In power inverter systems, **IPB65R660CFD-VB** can handle high voltage DC power and perform power conversion. Its high voltage tolerance and stable switching performance make it ideal for use in solar inverters, power inverters and other high power inverter modules, improving the overall efficiency and reliability of the system.
3. **Industrial power equipment**:
This MOSFET is suitable for use in industrial power equipment, such as high voltage motor drives and power conditioning systems. **IPB65R660CFD-VB** can handle high voltage loads, provide reliable switching and power regulation, and ensure stable operation of equipment in high voltage environments.
4. **High Voltage Protection Circuit**:
**IPB65R660CFD-VB** can also be used in high voltage protection circuits, such as power supply protection and high voltage load switching. Its high voltage tolerance and on-resistance characteristics enable it to switch effectively under high voltage conditions, protect the system from overvoltage damage, and enhance the safety and stability of the system.
1. **High voltage power switch**:
The high voltage tolerance of **IPB65R660CFD-VB** makes it ideal for high voltage power switch applications. In power management systems, this MOSFET can efficiently switch 700V power, ensuring efficient power conversion and system stability. It is particularly suitable for use in high voltage DC-DC converters and power switch modules.
2. **Power inverter**:
In power inverter systems, **IPB65R660CFD-VB** can handle high voltage DC power and perform power conversion. Its high voltage tolerance and stable switching performance make it ideal for use in solar inverters, power inverters and other high power inverter modules, improving the overall efficiency and reliability of the system.
3. **Industrial power equipment**:
This MOSFET is suitable for use in industrial power equipment, such as high voltage motor drives and power conditioning systems. **IPB65R660CFD-VB** can handle high voltage loads, provide reliable switching and power regulation, and ensure stable operation of equipment in high voltage environments.
4. **High Voltage Protection Circuit**:
**IPB65R660CFD-VB** can also be used in high voltage protection circuits, such as power supply protection and high voltage load switching. Its high voltage tolerance and on-resistance characteristics enable it to switch effectively under high voltage conditions, protect the system from overvoltage damage, and enhance the safety and stability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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