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IPB65R600C6-VB Product details
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IPB65R600C6-VB is a high voltage N-channel MOSFET in TO263 package, designed for high voltage applications. It has a drain-source voltage (VDS) of 700V and a drain current (ID) capability of 10A. The on-resistance (RDS(ON)) of this MOSFET is 600mΩ at VGS=10V, and it uses SJ_Multi-EPI technology to provide excellent electrical performance and thermal management capabilities. This MOSFET is suitable for high voltage power systems and applications requiring high reliability.
**IPB65R600C6-VB
IPB65R600C6-VB is a high voltage N-channel MOSFET in TO263 package, designed for high voltage applications. It has a drain-source voltage (VDS) of 700V and a drain current (ID) capability of 10A. The on-resistance (RDS(ON)) of this MOSFET is 600mΩ at VGS=10V, and it uses SJ_Multi-EPI technology to provide excellent electrical performance and thermal management capabilities. This MOSFET is suitable for high voltage power systems and applications requiring high reliability.
**IPB65R600C6-VB
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 10A | 600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
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- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 600mΩ @ VGS=10V
- **Drain current (ID)**: 10A
- **Technology**: SJ_Multi-EPI
**
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 600mΩ @ VGS=10V
- **Drain current (ID)**: 10A
- **Technology**: SJ_Multi-EPI
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Domain and module applications：
1. **High-voltage power supplies and converters**
The IPB65R600C6-VB plays an important role in high-voltage power supplies and converters, especially in power modules and power conversion equipment that need to handle high voltages. Its high drain-source voltage capability enables it to operate stably in high-voltage environments, ensuring the reliability and efficiency of the power system.
2. **Home and industrial appliances**
In home and industrial appliances, such as power tools and large appliances, this MOSFET can be used for high-voltage switching operations. It is able to handle high-voltage loads while providing stable performance and high durability, ensuring the safety and long life of the equipment.
3. **Power factor correction (PFC) systems**
The IPB65R600C6-VB is also suitable for use in power factor correction (PFC) systems. The high voltage withstand capability and stable switching characteristics of this MOSFET make it an excellent performer in PFC circuits, helping to improve the overall efficiency and power factor of the power system.
4. **Power Conversion and Control Module**
In high voltage power conversion and control modules, such as power inverters and high voltage power management systems, the high voltage tolerance and reliability of this MOSFET make it an ideal choice. It can effectively control and manage high voltage loads, ensuring the stability and performance of the power system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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