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IPB65R280E6-VB Product details
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Product Introduction
IPB65R280E6-VB is a high voltage single N-channel MOSFET in TO263 package, designed for high voltage and high power applications. Its maximum drain-source voltage (VDS) is 700V and the maximum on-current (ID) is 20A. The on-resistance of this MOSFET is 210mΩ at a gate drive voltage of 10V. Using advanced SJ_Multi-EPI technology, this MOSFET provides excellent high voltage performance and high reliability, suitable for application scenarios requiring high voltage stability.
IPB65R280E6-VB is a high voltage single N-channel MOSFET in TO263 package, designed for high voltage and high power applications. Its maximum drain-source voltage (VDS) is 700V and the maximum on-current (ID) is 20A. The on-resistance of this MOSFET is 210mΩ at a gate drive voltage of 10V. Using advanced SJ_Multi-EPI technology, this MOSFET provides excellent high voltage performance and high reliability, suitable for application scenarios requiring high voltage stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 20A | 210mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 700V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- @ VGS = 10V: 210mΩ
- **Maximum on-current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 700V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- @ VGS = 10V: 210mΩ
- **Maximum on-current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
The high voltage handling capability and stable switching performance of the IPB65R280E6-VB MOSFET enable it to excel in multiple high voltage applications. First, in **high voltage power management systems**, this MOSFET can efficiently control and manage high voltage loads to ensure stable and reliable operation of the system. Secondly, it also performs well in **switching power supplies (SMPS)** and **power factor correction (PFC) circuits**, which can handle power conversion in high voltage environments, improve system efficiency and reduce power losses. In addition, in **electric vehicle charging systems** and **solar inverters**, this MOSFET can handle high power demands and ensure the stability of the charging process or energy conversion. In **industrial power control systems** and **high voltage power modules**, the high voltage capability and reliability of the IPB65R280E6-VB also make it a key component, providing stable performance and efficient power management.
The high voltage handling capability and stable switching performance of the IPB65R280E6-VB MOSFET enable it to excel in multiple high voltage applications. First, in **high voltage power management systems**, this MOSFET can efficiently control and manage high voltage loads to ensure stable and reliable operation of the system. Secondly, it also performs well in **switching power supplies (SMPS)** and **power factor correction (PFC) circuits**, which can handle power conversion in high voltage environments, improve system efficiency and reduce power losses. In addition, in **electric vehicle charging systems** and **solar inverters**, this MOSFET can handle high power demands and ensure the stability of the charging process or energy conversion. In **industrial power control systems** and **high voltage power modules**, the high voltage capability and reliability of the IPB65R280E6-VB also make it a key component, providing stable performance and efficient power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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