IPB65R280C6-VB Product details
Product introduction:
IPB65R280C6-VB is a high voltage, high power single N-channel MOSFET in TO263 package. This MOSFET has a drain-source voltage (VDS) of up to 700V, and a gate voltage (VGS) of ±30V, making it suitable for high voltage and high power applications. The turn-on voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 210mΩ @ VGS=10V, and it can handle a drain current (ID) of up to 20A. Using SJ_Multi-EPI technology, this MOSFET provides excellent electrical performance and high durability, and is particularly suitable for high voltage switching and power conversion applications.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 20A | 210mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 700V
- **Gate voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 210mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI technology
Domain and module applications:
1. **High voltage power conversion**: IPB65R280C6-VB performs well in high voltage power conversion systems. Its high withstand voltage of 700V and high drain current capability make it suitable for high voltage DC-DC converters and high voltage power switch modules. This MOSFET can stably handle the switching operation of high voltage power supplies and provide reliable performance during power conversion.
2. **Power inverter**: In power inverter applications, this MOSFET is suitable for high voltage DC to AC conversion. Its high voltage carrying capacity and medium on-resistance make it very suitable for high voltage power conversion equipment such as solar inverters and power inverters, ensuring high efficiency and low power consumption.
3. **Industrial power supply and drive module**: IPB65R280C6-VB can be used in industrial power supply and drive modules, especially in occasions where high voltage and high power are required. Its high voltage tolerance and high current carrying capacity make it suitable for modules such as motor drive, load switching and power switching, providing stable and efficient operation.
4. **High power switch**: This MOSFET is capable of handling high power switching applications and is suitable for devices that require high voltage and high current. It can be used in switch control, load switching and high voltage systems of high power supplies to ensure the safety and reliability of the circuit.
5. **Power protection circuit**: In the power protection circuit, IPB65R280C6-VB can be used for overvoltage protection and high voltage load switching. Its high voltage withstand characteristics and good current carrying capacity ensure the protection function and stability of the circuit, and it is suitable for protection and switching applications of high voltage power supplies.
The high voltage tolerance and excellent switching performance of IPB65R280C6-VB make it excel in a variety of high voltage and high power applications, and it is an ideal choice for designing high-efficiency power management and power conversion systems.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image