IPB65R190CFD-VB Product details
Product introduction:
IPB65R190CFD-VB is a high voltage N-channel MOSFET in TO263 package, designed for high voltage and high power applications. Its drain-source voltage (VDS) is as high as 650V, and the drain current (ID) can reach up to 20A. The on-resistance (RDS(ON)) of this MOSFET is 160mΩ at VGS of 10V, showing excellent current handling capability and low conduction loss. IPB65R190CFD-VB adopts SJ_Multi-EPI technology to ensure its reliability and high efficiency performance under high voltage conditions, and is very suitable for high voltage power conversion and switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 160mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI technology, providing high voltage withstand capability and low conduction loss
- **Thermal resistance (Rth(ja))**: Typical value is about 62 K/W
- **Junction temperature range**: -55°C to +175°C
Domain and module applications:
1. **High voltage power conversion**: IPB65R190CFD-VB performs well in high voltage power conversion applications, especially for AC-DC converters and high voltage DC-DC converters. Its high voltage tolerance and low on-resistance enable it to effectively manage and convert high voltage power, improving power conversion efficiency and system stability.
2. **Power switch**: In power switching applications such as power amplifiers, motor drives and power switch modules, this MOSFET can provide reliable switching performance. Its high voltage tolerance and low conduction loss help improve the power density and efficiency of the system.
3. **Industrial power management**: IPB65R190CFD-VB is suitable for power management systems of industrial equipment, capable of handling high voltage and high power requirements. Its excellent current handling capability and low conduction loss characteristics make it suitable for use in power control and protection circuits to ensure stable and efficient operation of industrial systems.
4. **Solar Inverter**: In solar inverter applications, IPB65R190CFD-VB can be used for high voltage switching operations. Its high voltage tolerance and low conduction loss characteristics make it very suitable for the DC power supply part of the inverter, improving the conversion efficiency and system stability of the inverter.
5. **Battery Management System (BMS)**: In high voltage battery management systems, IPB65R190CFD-VB can be used for battery switching and protection. Its high voltage tolerance and low on-resistance ensure the efficient operation and safety of the battery management system, and is suitable for the protection and management of high voltage battery packs.
The high voltage tolerance and high efficiency performance of IPB65R190CFD-VB make it excellent in various high voltage applications, suitable for use in power conversion and switch modules and other fields.
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