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IPB65R190C6-VB Product details
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1. Product Introduction
**IPB65R190C6-VB** is a high voltage single N-channel MOSFET in TO263 package. This MOSFET has a drain-source voltage (VDS) of 700V, which makes it perform well in high voltage applications. Its gate-source voltage (VGS) range is ±30V and the turn-on voltage (Vth) is 3.5V. Using SJ_Multi-EPI technology, it has an on-resistance (RDS(ON)@10V) of 210mΩ and can carry a continuous drain current (ID) of up to 20A. This MOSFET is designed for high voltage, high power switching applications, providing excellent switching performance and reliability.
**IPB65R190C6-VB** is a high voltage single N-channel MOSFET in TO263 package. This MOSFET has a drain-source voltage (VDS) of 700V, which makes it perform well in high voltage applications. Its gate-source voltage (VGS) range is ±30V and the turn-on voltage (Vth) is 3.5V. Using SJ_Multi-EPI technology, it has an on-resistance (RDS(ON)@10V) of 210mΩ and can carry a continuous drain current (ID) of up to 20A. This MOSFET is designed for high voltage, high power switching applications, providing excellent switching performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 20A | 210mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 700V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Model**: IPB65R190C6-VB
- **Package**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Throw-on voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 210mΩ @ VGS=10V
- **Continuous drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Power loss**: Optimized to reduce power consumption and improve heat dissipation efficiency
- **Switching characteristics**: High switching speed, suitable for high frequency applications
- **Operating temperature range**: -55°C to 175°C
- **Model**: IPB65R190C6-VB
- **Package**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Throw-on voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 210mΩ @ VGS=10V
- **Continuous drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Power loss**: Optimized to reduce power consumption and improve heat dissipation efficiency
- **Switching characteristics**: High switching speed, suitable for high frequency applications
- **Operating temperature range**: -55°C to 175°C
Domain and module applications：
3. Applicable fields and modules
**IPB65R190C6-VB** MOSFET's high voltage and medium current capabilities make it outstanding in the following fields and modules:
- **High voltage power management**: In power management systems that need to handle high voltages, such as high-voltage DC-DC converters and power regulators, this MOSFET can effectively control power conversion under high voltage conditions. Its high voltage withstand capability and excellent switching performance can ensure the stability and efficiency of the system.
- **Inverter system**: In high voltage inverter systems, such as solar inverters and industrial inverters, IPB65R190C6-VB can handle high voltage power conversion and switching operations. Its high voltage withstand characteristics and reliability make it suitable for demanding inverter applications.
- **Motor drive**: For high voltage motor drive systems, this MOSFET can efficiently control the power output of the motor. Especially in high voltage motor applications, its high voltage withstand capability provides the necessary safety margin.
- **Power Switch**: The low on-resistance and high voltage withstand capability of IPB65R190C6-VB make it an ideal choice in high voltage power switch applications. It can efficiently handle switching operations and reduce power losses.
- **High Power Converter**: In high power converters and power modules, this MOSFET can withstand high voltages and medium currents, providing efficient power conversion and switching control. Its excellent switching characteristics and low power consumption characteristics help improve the performance of the overall system.
- **Automotive Electronics**: In high voltage automotive electronic systems, such as the power management system of electric vehicles, IPB65R190C6-VB MOSFET can provide reliable high voltage switching capabilities to meet the high power control requirements of electric vehicle systems.
**IPB65R190C6-VB** MOSFET is suitable for multiple applications such as high voltage power management, inverter systems, motor drives, power switches, etc. due to its high voltage withstand capability and excellent switching performance. It provides reliable and efficient performance in high voltage and medium current applications.
**IPB65R190C6-VB** MOSFET's high voltage and medium current capabilities make it outstanding in the following fields and modules:
- **High voltage power management**: In power management systems that need to handle high voltages, such as high-voltage DC-DC converters and power regulators, this MOSFET can effectively control power conversion under high voltage conditions. Its high voltage withstand capability and excellent switching performance can ensure the stability and efficiency of the system.
- **Inverter system**: In high voltage inverter systems, such as solar inverters and industrial inverters, IPB65R190C6-VB can handle high voltage power conversion and switching operations. Its high voltage withstand characteristics and reliability make it suitable for demanding inverter applications.
- **Motor drive**: For high voltage motor drive systems, this MOSFET can efficiently control the power output of the motor. Especially in high voltage motor applications, its high voltage withstand capability provides the necessary safety margin.
- **Power Switch**: The low on-resistance and high voltage withstand capability of IPB65R190C6-VB make it an ideal choice in high voltage power switch applications. It can efficiently handle switching operations and reduce power losses.
- **High Power Converter**: In high power converters and power modules, this MOSFET can withstand high voltages and medium currents, providing efficient power conversion and switching control. Its excellent switching characteristics and low power consumption characteristics help improve the performance of the overall system.
- **Automotive Electronics**: In high voltage automotive electronic systems, such as the power management system of electric vehicles, IPB65R190C6-VB MOSFET can provide reliable high voltage switching capabilities to meet the high power control requirements of electric vehicle systems.
**IPB65R190C6-VB** MOSFET is suitable for multiple applications such as high voltage power management, inverter systems, motor drives, power switches, etc. due to its high voltage withstand capability and excellent switching performance. It provides reliable and efficient performance in high voltage and medium current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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