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IPB60R950C6-VB Product details

Product introduction:

1. Product Introduction of IPB60R950C6-VB MOSFET

IPB60R950C6-VB is a high voltage N-channel power MOSFET in TO-263 package. It is designed to handle high voltage and medium current applications, with a maximum drain-source voltage (VDS) of 650V. This MOSFET uses planar technology (Plannar), which can provide high voltage resistance and stable performance. Its on-resistance (RDS(ON)) is 1100mΩ, and it can effectively manage power loss when the gate voltage (VGS) is 10V. The maximum continuous drain current (ID) of the device is 10A, which is suitable for various power electronics applications that require high voltage resistance and medium current. The gate threshold voltage (Vth) is 3.5V, ensuring its reliability and stability during switching operations.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 650V 3.5V 10A 1100mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 650V 3.5V 10A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 650V 3.5V 10A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
2. Detailed parameter description of IPB60R950C6-VB MOSFET

- **Package type**: TO-263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 10A
- **Technology type**: Plannar

Domain and module applications:

III. Application fields and module examples of IPB60R950C6-VB

1. **High voltage power converter**: IPB60R950C6-VB performs well in high voltage power converters, especially in situations where high voltage needs to be converted to lower voltage. Its 650V withstand voltage capability makes it suitable for AC-DC converters and high voltage DC-DC converters, ensuring the stability and safety of the conversion process.

2. **Motor drive system**: In motor drive systems, IPB60R950C6-VB can be used to drive high voltage motors, especially for motor switching control and inverter applications. Its high withstand voltage capability and moderate on-resistance enable it to handle currents at higher voltages, suitable for industrial motors and high voltage motor control systems.

3. **Inverter and power conditioning module**: This MOSFET is widely used in inverters and power conditioning modules, especially those applications that require high voltage handling. Its high voltage tolerance and good switching performance make it suitable for use in solar inverters, wind inverters and other power conditioning modules.

4. **Household appliances**: In the power management of household appliances, such as high-voltage power modules, power regulators, etc., IPB60R950C6-VB can provide stable power control. Its high voltage capability and stable on-resistance ensure reliable operation under high voltage conditions inside the appliance.

In summary, IPB60R950C6-VB MOSFET is suitable for use in high-voltage power conversion, motor drive systems, inverters and power conditioning modules with its high voltage tolerance and moderate on-resistance, providing reliable and efficient power management solutions for these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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