IPB60R299CP-VB Product details
Product introduction:
IPB60R299CP-VB is a high-voltage N-channel MOSFET provided by Infineon in TO263 package. This MOSFET adopts SJ_Multi-EPI technology and is designed for high-voltage, high-power applications. Its maximum drain-source voltage (VDS) is 650V, the maximum gate-source voltage (VGS) is ±30V, and the threshold voltage (Vth) is 3.5V. Its on-resistance (RDS(ON)) is 300mΩ at VGS=10V, and the maximum drain current (ID) is 15A. This MOSFET is suitable for power management, power conversion and industrial applications that need to handle high voltage and high power, providing stable and reliable performance.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 15A | 300mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 300mΩ @ VGS=10V
- **Maximum drain current (ID)**: 15A
- **Technology type**: SJ_Multi-EPI
Domain and module applications:
1. **High-voltage power conversion**:
IPB60R299CP-VB is very suitable for high-voltage power conversion applications. Due to its high drain-source voltage of up to 650V and high on-resistance, it can handle the conversion and regulation of high-voltage power. This MOSFET can be used in DC-DC converters, especially in situations where high-voltage power needs to be converted to lower voltage output, such as industrial power supply systems and high-voltage power modules.
2. **Industrial electrical equipment**:
In industrial electrical equipment, the high voltage handling capability and reliability of IPB60R299CP-VB make it an ideal choice. It can be used in the switching and control of motor drives, power control systems, and other high-voltage loads. Although its on-resistance is high, it can still effectively support current flow and control in some power-intensive applications to ensure stable operation of the equipment.
3. **Household appliances and power systems**:
In household appliances such as air conditioners and refrigerators, the IPB60R299CP-VB can be used for high-voltage power management and control. It can stably handle high-voltage inputs to ensure safe and reliable operation of the equipment. In addition, this MOSFET is also suitable for power conversion and protection circuits in power systems to improve system efficiency and stability.
4. **Power inverter**:
In power inverter systems, the IPB60R299CP-VB can be used to convert DC power to AC power. Its high voltage tolerance makes it suitable for new energy systems such as solar inverters and wind inverters. Despite the high on-resistance, its high voltage and high power handling capabilities can still ensure the stability of the inverter and reliable power output.
In general, IPB60R299CP-VB provides reliable solutions in the fields of high voltage power management, industrial control, home appliances and power inverters through its high voltage tolerance and reliability, and is suitable for various applications requiring high voltage and high power processing.
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