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IPB60R280C6-VB Product details
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Product Introduction
**IPB60R280C6-VB** is a high-voltage, high-power N-Channel MOSFET in TO263 package and manufactured based on SJ_Multi-EPI technology. This MOSFET can withstand drain-source voltage up to 650V and has a maximum continuous current capability of 15A. At VGS=10V, its on-resistance is 300mΩ. **IPB60R280C6-VB** is designed for high-voltage, high-power applications, and is particularly suitable for power management, power switches, inverters and other fields to ensure high efficiency and stability.
**IPB60R280C6-VB** is a high-voltage, high-power N-Channel MOSFET in TO263 package and manufactured based on SJ_Multi-EPI technology. This MOSFET can withstand drain-source voltage up to 650V and has a maximum continuous current capability of 15A. At VGS=10V, its on-resistance is 300mΩ. **IPB60R280C6-VB** is designed for high-voltage, high-power applications, and is particularly suitable for power management, power switches, inverters and other fields to ensure high efficiency and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 15A | 300mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 300mΩ @ VGS=10V
- **Maximum continuous current (ID)**: 15A
- **Technology**: SJ_Multi-EPI
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 300mΩ @ VGS=10V
- **Maximum continuous current (ID)**: 15A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applicable fields and modules
1. **High voltage power management system**:
**IPB60R280C6-VB**'s high voltage handling capability makes it suitable for high voltage power management systems, including high voltage DC-DC converters and power switch modules. In these applications, this MOSFET can effectively manage high voltages of 650V, ensuring high efficiency and stability, and is suitable for switching and controlling high voltage power supplies.
2. **Power inverter**:
In power inverters, **IPB60R280C6-VB** is able to handle high voltage DC power and perform efficient power conversion. Due to its high voltage withstand capability and stable conduction performance, this MOSFET is suitable for solar inverters and other high power inverter modules, helping to improve the efficiency and reliability of the inverter.
3. **Industrial power equipment**:
This MOSFET is suitable for industrial power equipment such as high voltage motor drives and power conditioning systems. In industrial environments, the high voltage and high current handling capabilities of the **IPB60R280C6-VB** can handle high voltage loads, improve system stability and performance, and ensure reliable operation of equipment under harsh conditions.
4. **High Voltage Switching and Protection Circuits**:
**IPB60R280C6-VB** can be used in high voltage switching and protection circuits, such as power supply protection and high voltage load switching. Its high voltage tolerance and on-resistance characteristics enable it to switch efficiently under high voltage conditions, protect the system from overvoltage damage, and improve the overall safety and stability of the system.
1. **High voltage power management system**:
**IPB60R280C6-VB**'s high voltage handling capability makes it suitable for high voltage power management systems, including high voltage DC-DC converters and power switch modules. In these applications, this MOSFET can effectively manage high voltages of 650V, ensuring high efficiency and stability, and is suitable for switching and controlling high voltage power supplies.
2. **Power inverter**:
In power inverters, **IPB60R280C6-VB** is able to handle high voltage DC power and perform efficient power conversion. Due to its high voltage withstand capability and stable conduction performance, this MOSFET is suitable for solar inverters and other high power inverter modules, helping to improve the efficiency and reliability of the inverter.
3. **Industrial power equipment**:
This MOSFET is suitable for industrial power equipment such as high voltage motor drives and power conditioning systems. In industrial environments, the high voltage and high current handling capabilities of the **IPB60R280C6-VB** can handle high voltage loads, improve system stability and performance, and ensure reliable operation of equipment under harsh conditions.
4. **High Voltage Switching and Protection Circuits**:
**IPB60R280C6-VB** can be used in high voltage switching and protection circuits, such as power supply protection and high voltage load switching. Its high voltage tolerance and on-resistance characteristics enable it to switch efficiently under high voltage conditions, protect the system from overvoltage damage, and improve the overall safety and stability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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