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IPB60R250CP-VB Product details
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IPB60R250CP-VB is a high-voltage N-channel MOSFET in TO263 package. This MOSFET provides a drain-source voltage (VDS) of 650V and a drain current (ID) capability of 20A, suitable for high-voltage applications. Its on-resistance (RDS(ON)) is 160mΩ at VGS=10V, and it uses SJ_Multi-EPI technology with excellent electrical performance and thermal management characteristics. This MOSFET is suitable for high-power power supply systems that require high voltage resistance and high reliability.
**IPB60R250CP-VB
IPB60R250CP-VB is a high-voltage N-channel MOSFET in TO263 package. This MOSFET provides a drain-source voltage (VDS) of 650V and a drain current (ID) capability of 20A, suitable for high-voltage applications. Its on-resistance (RDS(ON)) is 160mΩ at VGS=10V, and it uses SJ_Multi-EPI technology with excellent electrical performance and thermal management characteristics. This MOSFET is suitable for high-power power supply systems that require high voltage resistance and high reliability.
**IPB60R250CP-VB
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
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- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
**
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
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Domain and module applications：
1. **High-voltage power converter**
The IPB60R250CP-VB is widely used in high-voltage power converters, such as industrial power supplies, UPS (uninterruptible power supplies), and power conversion equipment. Its high drain-source voltage and stable switching characteristics enable it to effectively handle power conversion in high-voltage environments, ensuring system stability and reliability.
2. **Power factor correction (PFC) circuit**
In power factor correction circuits, the high voltage tolerance and low on-resistance of this MOSFET make it suitable for high-voltage PFC design. It can effectively improve the efficiency of the power system, reduce losses, and ensure that the power quality meets industrial standards.
3. **High-voltage motor drive**
The IPB60R250CP-VB is also suitable for high-voltage motor drive systems, such as power tools and industrial motor drives. Its high voltage handling capability and good thermal management characteristics enable it to stably drive high-power motors while providing reliable performance.
4. **Home Appliances and Electrical Appliances**
In home appliances and other high-voltage electrical appliances, such as microwave ovens and air conditioners, this MOSFET can be used to control high-voltage switching operations. Its high withstand voltage and high current capabilities ensure safe operation of electrical appliances and improve overall equipment performance and efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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