中文
English
IPB60R199CP-VB Product details
Back to previous pageProduct introduction：
IPB60R199CP-VB Product Introduction
IPB60R199CP-VB is a high voltage single N-channel MOSFET packaged in TO263. This MOSFET uses SJ_Multi-EPI technology and is designed for applications that require high voltage and high power handling capabilities. It can withstand drain-source voltages up to 650V and has a maximum drain current capability of 20A. Its higher on-resistance (160mΩ) and higher gate drive voltage (±30V) make it suitable for high voltage and high power switching and control applications.
IPB60R199CP-VB is a high voltage single N-channel MOSFET packaged in TO263. This MOSFET uses SJ_Multi-EPI technology and is designed for applications that require high voltage and high power handling capabilities. It can withstand drain-source voltages up to 650V and has a maximum drain current capability of 20A. Its higher on-resistance (160mΩ) and higher gate drive voltage (±30V) make it suitable for high voltage and high power switching and control applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IPB60R199CP-VB Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate drive voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI technology
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate drive voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI technology
Domain and module applications：
Applications and module examples
1. **High voltage power converter**: The IPB60R199CP-VB is suitable for high voltage power converters, such as high voltage DC-DC converters and high voltage power adapters. Its 650V drain-source voltage tolerance enables it to work stably in high voltage environments, providing reliable power conversion solutions.
2. **Electric vehicle (EV) charging system**: In the charging system of electric vehicles, this MOSFET is able to handle the needs of high voltage and high power. Its high voltage withstand capability and high current handling capability help ensure the safety and efficiency of the charging system, especially in fast charging and high power charging scenarios.
3. **Industrial power control**: In industrial applications, such as high voltage motor drive and high power load control, the IPB60R199CP-VB is able to provide stable switching control at high voltage. Its excellent voltage tolerance and high power handling capability ensure the efficient operation and durability of the equipment.
4. **Power Inverter**: This MOSFET is suitable for power inverter applications, such as photovoltaic inverters and wind power generation systems. Its high voltage and high current capabilities can effectively handle the high power conversion requirements in renewable energy systems, improving the overall energy efficiency and stability of the system.
In summary, IPB60R199CP-VB is a MOSFET suitable for high voltage and high power applications. With its high voltage, reliable switching performance and stable current handling capability, it is widely used in power conversion, electric vehicle charging systems, industrial power control, and power inverters.
1. **High voltage power converter**: The IPB60R199CP-VB is suitable for high voltage power converters, such as high voltage DC-DC converters and high voltage power adapters. Its 650V drain-source voltage tolerance enables it to work stably in high voltage environments, providing reliable power conversion solutions.
2. **Electric vehicle (EV) charging system**: In the charging system of electric vehicles, this MOSFET is able to handle the needs of high voltage and high power. Its high voltage withstand capability and high current handling capability help ensure the safety and efficiency of the charging system, especially in fast charging and high power charging scenarios.
3. **Industrial power control**: In industrial applications, such as high voltage motor drive and high power load control, the IPB60R199CP-VB is able to provide stable switching control at high voltage. Its excellent voltage tolerance and high power handling capability ensure the efficient operation and durability of the equipment.
4. **Power Inverter**: This MOSFET is suitable for power inverter applications, such as photovoltaic inverters and wind power generation systems. Its high voltage and high current capabilities can effectively handle the high power conversion requirements in renewable energy systems, improving the overall energy efficiency and stability of the system.
In summary, IPB60R199CP-VB is a MOSFET suitable for high voltage and high power applications. With its high voltage, reliable switching performance and stable current handling capability, it is widely used in power conversion, electric vehicle charging systems, industrial power control, and power inverters.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
