中文
English
IPB60R199CPA-VB Product details
Back to previous pageProduct introduction：
Product Introduction
IPB60R199CPA-VB is a high voltage single N-channel MOSFET in TO263 package, designed for high voltage applications. The maximum drain-source voltage (VDS) of this MOSFET is 650V, and the maximum on-current (ID) is 20A. Its on-resistance is 160mΩ at a gate drive voltage of 10V. This MOSFET adopts advanced SJ_Multi-EPI technology, providing excellent high voltage performance and reliability, suitable for high voltage and high power density application scenarios.
IPB60R199CPA-VB is a high voltage single N-channel MOSFET in TO263 package, designed for high voltage applications. The maximum drain-source voltage (VDS) of this MOSFET is 650V, and the maximum on-current (ID) is 20A. Its on-resistance is 160mΩ at a gate drive voltage of 10V. This MOSFET adopts advanced SJ_Multi-EPI technology, providing excellent high voltage performance and reliability, suitable for high voltage and high power density application scenarios.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- @ VGS = 10V: 160mΩ
- **Maximum on-current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- @ VGS = 10V: 160mΩ
- **Maximum on-current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples: The high voltage handling capability and good power characteristics of the IPB60R199CPA-VB MOSFET enable it to perform well in a variety of high voltage applications. First, in **power factor correction (PFC) circuits**, this MOSFET can effectively handle high voltage loads, improve power efficiency and reduce energy loss. Second, in **switching power supply (SMPS)** applications, it can efficiently switch and control high voltage loads, provide stable power output, and ensure system reliability. It also performs well in high voltage applications such as **electric vehicle chargers** and **solar inverters**, and can handle high power requirements to ensure stable operation of the system. In addition, due to its excellent high voltage performance, the IPB60R199CPA-VB is also suitable for **high voltage power modules** and **industrial power control systems**, providing stable performance and efficient power management for these fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
