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IPB60R190C6-VB Product details
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1. Product Introduction
IPB60R190C6-VB is a high voltage, high power single N-channel MOSFET in TO263 package. With a drain-source voltage (VDS) of up to 650V and a gate voltage (VGS) of ±30V, this MOSFET is suitable for applications that require high voltage and high power handling. With a turn-on voltage (Vth) of 3.5V and an on-resistance (RDS(ON)) of 160mΩ @ VGS=10V, it can handle a drain current (ID) of up to 20A. Using SJ_Multi-EPI technology, this MOSFET provides excellent electrical performance and durability, and is particularly suitable for high voltage switching and power conversion applications.
IPB60R190C6-VB is a high voltage, high power single N-channel MOSFET in TO263 package. With a drain-source voltage (VDS) of up to 650V and a gate voltage (VGS) of ±30V, this MOSFET is suitable for applications that require high voltage and high power handling. With a turn-on voltage (Vth) of 3.5V and an on-resistance (RDS(ON)) of 160mΩ @ VGS=10V, it can handle a drain current (ID) of up to 20A. Using SJ_Multi-EPI technology, this MOSFET provides excellent electrical performance and durability, and is particularly suitable for high voltage switching and power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI technology
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI technology
Domain and module applications：
3. Application fields and module examples
1. **High voltage power management**: IPB60R190C6-VB performs well in high voltage power management systems. Its high withstand voltage of 650V makes it suitable for high voltage DC-DC converters and high voltage power switch modules. This MOSFET can handle the switching operation of high voltage power supplies and provide stable performance and low power consumption during power conversion.
2. **Power inverter**: In power inverter applications, IPB60R190C6-VB is suitable for high voltage DC to AC conversion. Its high voltage carrying capacity and medium on-resistance make it suitable for power inverter designs that require stability and high efficiency, commonly found in solar inverters, UPS systems, etc.
3. **Industrial power supply and drive module**: This MOSFET can be used in industrial power supply and drive modules, especially in application scenarios that require high voltage and high power. Its 20A drain current handling capability makes it suitable for modules such as motor drives, power switches and load switches.
4. **High-power switching**: In high-power switching applications, the IPB60R190C6-VB provides reliable switching performance and is suitable for switch control of high-power devices and high-voltage systems. For example, in power electronic systems and high-voltage converters, this MOSFET can ensure high-efficiency and low-power operation.
5. **Power protection circuit**: In power protection circuits, the IPB60R190C6-VB can be used for overvoltage protection and high-voltage load switching. Its high withstand voltage and high current carrying capacity ensure the safety and reliability of the circuit, and it is suitable for high-voltage power protection and load switching applications.
The high voltage tolerance and stable performance of the IPB60R190C6-VB make it excel in a variety of high-power and high-voltage applications, making it an ideal choice for designing high-efficiency power management and power conversion systems.
1. **High voltage power management**: IPB60R190C6-VB performs well in high voltage power management systems. Its high withstand voltage of 650V makes it suitable for high voltage DC-DC converters and high voltage power switch modules. This MOSFET can handle the switching operation of high voltage power supplies and provide stable performance and low power consumption during power conversion.
2. **Power inverter**: In power inverter applications, IPB60R190C6-VB is suitable for high voltage DC to AC conversion. Its high voltage carrying capacity and medium on-resistance make it suitable for power inverter designs that require stability and high efficiency, commonly found in solar inverters, UPS systems, etc.
3. **Industrial power supply and drive module**: This MOSFET can be used in industrial power supply and drive modules, especially in application scenarios that require high voltage and high power. Its 20A drain current handling capability makes it suitable for modules such as motor drives, power switches and load switches.
4. **High-power switching**: In high-power switching applications, the IPB60R190C6-VB provides reliable switching performance and is suitable for switch control of high-power devices and high-voltage systems. For example, in power electronic systems and high-voltage converters, this MOSFET can ensure high-efficiency and low-power operation.
5. **Power protection circuit**: In power protection circuits, the IPB60R190C6-VB can be used for overvoltage protection and high-voltage load switching. Its high withstand voltage and high current carrying capacity ensure the safety and reliability of the circuit, and it is suitable for high-voltage power protection and load switching applications.
The high voltage tolerance and stable performance of the IPB60R190C6-VB make it excel in a variety of high-power and high-voltage applications, making it an ideal choice for designing high-efficiency power management and power conversion systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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