IPB60R165CP-VB Product details
Product introduction:
IPB60R165CP-VB is a high voltage N-channel MOSFET in TO263 package, designed for high voltage and medium current applications. Its maximum drain-source voltage (VDS) reaches 650V, and the drain current (ID) is up to 20A. The on-resistance (RDS(ON)) of this MOSFET is 160mΩ at VGS of 10V, which is suitable for occasions requiring high voltage tolerance and stable performance. IPB60R165CP-VB adopts SJ_Multi-EPI technology, which provides excellent current handling capability and low conduction loss, and is very suitable for use in power conversion and switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 160mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI technology, providing high voltage withstand capability and low conduction loss
- **Thermal resistance (Rth(ja))**: Typical value is about 62 K/W
- **Junction temperature range**: -55°C to +175°C
Domain and module applications:
1. **High voltage power conversion**: IPB60R165CP-VB is suitable for high voltage power conversion modules, such as AC-DC converters and high voltage DC-DC (DC-DC) converters. Its high drain-source voltage capability and low on-resistance enable it to effectively manage and convert high voltage power, improving the efficiency and stability of the system.
2. **Power switch**: In power switching applications that require high voltage and high current, such as power amplifiers, motor drives, and power switch modules, this MOSFET can provide reliable switching performance. Its high voltage tolerance and low conduction loss help improve the overall efficiency and performance of the system.
3. **Industrial power management**: In the power management system of industrial equipment, the high voltage and current handling capabilities of IPB60R165CP-VB make it very suitable for power control and protection circuits. It can effectively manage the power requirements of industrial equipment and protect the system from electrical faults.
4. **Solar Inverter**: In solar inverters, this MOSFET can be used for high voltage and high power switching operations. Its excellent voltage tolerance and low conduction loss characteristics make it suitable for the DC power supply part of the inverter, improving the conversion efficiency and stability of the system.
5. **Battery Management System (BMS)**: In high voltage battery management systems, IPB60R165CP-VB can be used for battery switching and protection. Its high voltage tolerance and low on-resistance ensure the efficient operation and safety of the battery management system.
The high voltage tolerance and medium current handling capability of IPB60R165CP-VB make it excellent in high voltage applications and suitable for use in various power conversion and switching modules.
Technical support:
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