中文
English
IPB600N25N3 G-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
**IPB600N25N3 G-VB** is a high voltage, high current single N-channel MOSFET in TO263 package. With a drain-source voltage (VDS) of 250V and a gate-source voltage (VGS) of ±20V, this MOSFET is suitable for applications that require high voltage tolerance and medium current handling. Using Trench technology, this MOSFET has an on-resistance of 40mΩ at a gate-source voltage of 10V and can support a continuous drain current (ID) of up to 60A. It is designed to provide excellent switching performance and high efficiency, suitable for use in a variety of high voltage applications.
**IPB600N25N3 G-VB** is a high voltage, high current single N-channel MOSFET in TO263 package. With a drain-source voltage (VDS) of 250V and a gate-source voltage (VGS) of ±20V, this MOSFET is suitable for applications that require high voltage tolerance and medium current handling. Using Trench technology, this MOSFET has an on-resistance of 40mΩ at a gate-source voltage of 10V and can support a continuous drain current (ID) of up to 60A. It is designed to provide excellent switching performance and high efficiency, suitable for use in a variety of high voltage applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 60A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Model**: IPB600N25N3 G-VB
- **Package**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Throwing voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 40mΩ @ VGS=10V
- **Continuous drain current (ID)**: 60A
- **Technology**: Trench technology
- **Power loss**: Optimized to reduce power consumption and improve heat dissipation efficiency
- **Switching characteristics**: High switching speed, suitable for high frequency applications
- **Operating temperature range**: -55°C to 175°C
- **Model**: IPB600N25N3 G-VB
- **Package**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Throwing voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 40mΩ @ VGS=10V
- **Continuous drain current (ID)**: 60A
- **Technology**: Trench technology
- **Power loss**: Optimized to reduce power consumption and improve heat dissipation efficiency
- **Switching characteristics**: High switching speed, suitable for high frequency applications
- **Operating temperature range**: -55°C to 175°C
Domain and module applications：
3. Applicable fields and modules
The high voltage and medium current capabilities of the **IPB600N25N3 G-VB** MOSFET enable it to excel in the following fields and modules:
- **High voltage power management**: Due to its 250V drain-source voltage capability, the IPB600N25N3 G-VB is suitable for high voltage power management systems such as high voltage DC-DC converters and power regulators. It can effectively handle current under high voltage conditions to ensure stable power output.
- **Industrial power**: In industrial applications such as high voltage motor drives and power protection circuits, this MOSFET can provide reliable current control and switching performance. Its high voltage tolerance makes it suitable for use in high voltage environments of industrial equipment.
- **Inverter system**: In inverter systems, especially high voltage inverters used to convert DC power to AC power, the IPB600N25N3 G-VB can effectively handle power conversion under high voltage conditions and improve system efficiency.
- **Battery Management System**: In a battery management system (BMS), this MOSFET can be used for the protection and management of high-voltage batteries. Its high voltage withstand capability and low on-resistance can effectively control the battery charging and discharging process and provide overcurrent protection.
- **Switching Power Supply**: In a switching power supply module, the IPB600N25N3 G-VB can handle high voltage input and output, providing efficient switching performance. Its low on-resistance and high current capability help improve the overall efficiency and stability of the switching power supply.
- **High Power Motor Control**: For motor control systems that require high voltage and medium current, this MOSFET can effectively control the power output of the motor. Its high voltage withstand capability ensures reliability in high-voltage motor drive applications.
**IPB600N25N3 G-VB** MOSFET is suitable for high voltage power management, industrial power supply, inverter system, battery management system and other applications due to its high voltage withstand capability and excellent switching performance. Whether it is power control under high voltage conditions or switching applications in high current environments, it can provide reliable performance and efficient solutions.
The high voltage and medium current capabilities of the **IPB600N25N3 G-VB** MOSFET enable it to excel in the following fields and modules:
- **High voltage power management**: Due to its 250V drain-source voltage capability, the IPB600N25N3 G-VB is suitable for high voltage power management systems such as high voltage DC-DC converters and power regulators. It can effectively handle current under high voltage conditions to ensure stable power output.
- **Industrial power**: In industrial applications such as high voltage motor drives and power protection circuits, this MOSFET can provide reliable current control and switching performance. Its high voltage tolerance makes it suitable for use in high voltage environments of industrial equipment.
- **Inverter system**: In inverter systems, especially high voltage inverters used to convert DC power to AC power, the IPB600N25N3 G-VB can effectively handle power conversion under high voltage conditions and improve system efficiency.
- **Battery Management System**: In a battery management system (BMS), this MOSFET can be used for the protection and management of high-voltage batteries. Its high voltage withstand capability and low on-resistance can effectively control the battery charging and discharging process and provide overcurrent protection.
- **Switching Power Supply**: In a switching power supply module, the IPB600N25N3 G-VB can handle high voltage input and output, providing efficient switching performance. Its low on-resistance and high current capability help improve the overall efficiency and stability of the switching power supply.
- **High Power Motor Control**: For motor control systems that require high voltage and medium current, this MOSFET can effectively control the power output of the motor. Its high voltage withstand capability ensures reliability in high-voltage motor drive applications.
**IPB600N25N3 G-VB** MOSFET is suitable for high voltage power management, industrial power supply, inverter system, battery management system and other applications due to its high voltage withstand capability and excellent switching performance. Whether it is power control under high voltage conditions or switching applications in high current environments, it can provide reliable performance and efficient solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
