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IPB530N15N3 G-VB Product details

Product introduction:

1. Product Introduction of IPB530N15N3 G-VB MOSFET

IPB530N15N3 G-VB is a high-performance N-channel power MOSFET in TO-263 package, designed for medium-to-high voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 150V, which is suitable for circuits that require higher withstand voltage. Its maximum continuous drain current (ID) is 45A, enabling it to handle larger load currents. The on-resistance (RDS(ON)) is 35mΩ, providing efficient power management at a gate voltage (VGS) of 10V, and using advanced trench technology (Trench) to improve switching efficiency and reduce power consumption. The gate threshold voltage (Vth) is 3V, ensuring reliable switching operation under various operating conditions.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 150V 3V 45A 35mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 150V 3V 45A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 150V 3V 45A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
2. Detailed parameter description of IPB530N15N3 G-VB MOSFET

- **Package type**: TO-263
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 150V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 35mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 45A
- **Technology type**: Trench technology

Domain and module applications:

III. Application fields and module examples of IPB530N15N3 G-VB

1. **Power management system**: IPB530N15N3 G-VB can be used in high voltage DC-DC converters and power switch modules in power management systems. Due to its 150V withstand voltage and 45A current handling capability, it can efficiently manage the power flow during power conversion and is suitable for industrial power supplies and high voltage power systems.

2. **Electric vehicles and hybrid vehicles**: In the motor drive and battery management systems of electric vehicles and hybrid vehicles, IPB530N15N3 G-VB can handle high voltage and high current loads and provide stable power support. Its high voltage tolerance makes it suitable for high voltage battery and motor control systems in automobiles.

3. **High power LED lighting**: In high power LED lighting systems, IPB530N15N3 G-VB can be used in LED drive circuits to provide stable current drive. Due to its high voltage tolerance and low on-resistance, it can effectively manage the driving current of high-power LEDs and is suitable for industrial and commercial lighting applications.

4. **Industrial Equipment and Motor Control**: The IPB530N15N3 G-VB is capable of handling high current and high voltage loads in industrial equipment and motor control systems. Its high voltage tolerance and high current capability make it very suitable for variable frequency drives, motor control and industrial automation equipment, providing stable and efficient power management.

In summary, the IPB530N15N3 G-VB MOSFET is widely used in power management, electric vehicles, high-power LED lighting and industrial control with its high voltage tolerance, high current capability and low on-resistance, providing efficient and reliable power solutions for these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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