IPB50R250CP-VB Product details
Product introduction:
IPB50R250CP-VB is a high-voltage N-type power MOSFET in TO263 package, designed for high voltage applications. Its maximum drain-source voltage (VDS) is 650V, and the gate-source voltage (VGS) can reach ±30V, which is suitable for applications requiring high voltage and high safety. The threshold voltage of this MOSFET is 3.5V, based on SJ_Multi-EPI technology, providing good performance and reliability. At VGS=10V, the on-resistance (RDS(ON)) is 160mΩ, supporting a maximum drain current of 20A. This makes the IPB50R250CP-VB perform well in high-voltage switching and power conversion applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 160mΩ@VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI technology
Domain and module applications:
1. **High-voltage power switch**: The IPB50R250CP-VB performs well in high-voltage power switch applications, especially for power management systems in the 650V range. Its high withstand voltage capability and moderate on-resistance make it very reliable in high-voltage switches and inverters, helping to improve the overall efficiency and stability of the system.
2. **Inverter and inverter**: In inverter and inverter applications, this MOSFET is capable of handling high voltage and high power conversion. Its high withstand voltage characteristics and high current handling capabilities make it suitable for use in solar inverters, wind power generation systems, and other high-voltage conversion modules.
3. **Electric vehicles and hybrid vehicles**: The IPB50R250CP-VB is suitable for high-voltage power systems in electric vehicles and hybrid vehicles. Its high withstand voltage and high current capabilities enable it to support battery management systems and motor drive systems, ensuring high efficiency and reliability.
4. **Industrial Power and Motor Control**: In industrial power and motor control applications, this MOSFET can be used for high-voltage motor drives and power switches. Its high current handling capability and stable performance ensure efficient operation of industrial equipment, especially in high voltage and high current environments.
5. **Switching Power Supplies and High-Voltage Converters**: In switching power supplies and high-voltage converters, the IPB50R250CP-VB can be used as the main switching element to handle high voltage and high current power conversion tasks. Its excellent high-voltage performance and on-resistance help improve the efficiency and reliability of power conversion.
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