IPB50R199CP-VB Product details
Product introduction:
IPB50R199CP-VB is a high-performance N-channel MOSFET produced by Infineon and packaged in TO263. It uses SJ_Multi-EPI technology and is designed for high-voltage, high-power applications. The MOSFET has a maximum drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) tolerance of ±30V. Its threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 160mΩ at VGS=10V, and the maximum drain current (ID) is 20A. This MOSFET is mainly used in high-voltage and high-power power management, industrial and power conversion applications, providing stable and reliable performance.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI
Domain and module applications:
1. **High-voltage power conversion**:
IPB50R199CP-VB has a wide range of applications in high-voltage power converters. Its drain-source voltage of up to 650V allows it to operate stably in a high-voltage environment. This MOSFET can be used in high-voltage DC-DC converters to process power from a high-voltage input and convert it to the required low-voltage output. Due to its high voltage tolerance and relatively low on-resistance, it is able to efficiently manage power, reduce power losses, and improve system efficiency.
2. **Industrial electrical equipment**:
In industrial electrical equipment, the high voltage and high power handling capabilities of IPB50R199CP-VB make it an ideal choice. For example, it can be used in industrial drives and power control systems to handle high-voltage loads and provide stable power switching functions. In high-power electrical equipment, it is able to effectively manage current and ensure the reliability and stability of the equipment.
3. **Household appliances and high-voltage power supplies**:
This MOSFET is also suitable for some household appliances and high-voltage power modules, such as air conditioners, refrigerators, etc. These devices often require high-voltage power conversion and management functions. The IPB50R199CP-VB can operate under high voltage and high power conditions to ensure efficient operation and long life of the equipment.
4. **Power inverter**:
In power inverter applications, the IPB50R199CP-VB provides high voltage and high current handling capabilities, capable of converting DC power to AC power. Its high voltage tolerance and stability make it suitable for new energy systems such as solar inverters and wind inverters, ensuring stable performance of the inverter and reliable power conversion.
Overall, the IPB50R199CP-VB is widely used in high-voltage power management, industrial control, household appliances and power inverters through its high voltage, high power handling capabilities and high efficiency, providing reliable solutions for various high voltage and high power applications.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image